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    Semiconductor device
    1.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US11328949B2

    公开(公告)日：2022-05-10

    申请号：US16831500

    申请日：2020-03-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chae Ho Na ,  Sung Soo Kim ,  Gyu Hwan Ahn ,  Dong Hyun Roh

    IPC: H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786 ,  H01L21/762

    Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

    Semiconductor device
    2.
    发明授权
    Semiconductor device 有权

    公开(公告)号：US12237210B2

    公开(公告)日：2025-02-25

    申请号：US17740095

    申请日：2022-05-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chae Ho Na ,  Sung Soo Kim ,  Gyu Hwan Ahn ,  Dong Hyun Roh

    IPC: H01L21/762 ,  H01L27/088 ,  H01L29/06 ,  H01L29/78 ,  H01L29/786

    Abstract: A semiconductor device includes a substrate, a first fin, and a second fin. The first and second fins are spaced apart from each other in a first direction on the substrate and extend in a second direction intersecting the first direction. The semiconductor device further includes a first shallow trench formed between the first and second fins, and a field insulating film which fills at least a part of the first shallow trench. The field insulating film includes a first portion, a second portion adjacent to the first portion, and a third portion adjacent to the second portion and adjacent to a side wall of the first shallow trench. The first portion includes a central portion of an upper surface of the field insulating film in the first direction. The upper surface of the field insulating film is in a shape of a brace recessed toward the substrate.

    SEMICONDUCTOR DEVICES
    3.
    发明申请
    SEMICONDUCTOR DEVICES 有权

    公开(公告)号：US20220069092A1

    公开(公告)日：2022-03-03

    申请号：US17216903

    申请日：2021-03-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sun Ki Min ,  Chae Ho Na ,  Sang Koo Kang ,  Ik Soo Kim ,  Dong Hyun Roh

    IPC: H01L29/417 ,  H01L27/092 ,  H01L23/535 ,  H01L29/423 ,  H01L29/786

    Abstract: A semiconductor device may include first and second fin-shaped patterns on a substrate, that extend in a first direction, and are spaced apart from each other in a second direction. A first epitaxial pattern may be on the first fin-shaped pattern, and a second epitaxial pattern may be on the second fin-shaped pattern. A field insulating layer may be on the substrate, and may cover a sidewall of the first fin-shaped pattern, a sidewall of the second fin-shaped pattern, a part of a sidewall of the first epitaxial pattern, and a part of a sidewall of the second epitaxial pattern. The top surface of the field insulating layer may be higher than the bottom surface of the first epitaxial pattern and the bottom surface of the second epitaxial pattern.

    Semiconductor devices and methods for manufacturing the same
    5.
    发明授权
    Semiconductor devices and methods for manufacturing the same 有权

    公开(公告)号：US12080798B2

    公开(公告)日：2024-09-03

    申请号：US17667608

    申请日：2022-02-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Chae Ho Na ,  Sung Soo Kim ,  Sun Ki Min ,  Dong Hyun Roh

    IPC: H01L29/78 ,  H01L29/417

    CPC classification number: H01L29/7851 ,  H01L29/41791

    Abstract: Semiconductor devices and methods of forming the same are provided. The semiconductor devices may include a first fin-type pattern and a second fin-type pattern on a substrate, a first epitaxial pattern on the first fin-type pattern, a second epitaxial pattern on the second fin-type pattern, and a lower field insulating film on the substrate and extends on a sidewall of the first fin-type pattern and a sidewall of the second fin-type pattern, wherein the lower field insulating film includes a protrusion protruding in a third direction. The protrusion of the lower field insulating film may be between the first fin-type pattern and the second fin-type pattern, and a vertical level of a top surface of the protrusion of the lower field insulating film increases and then decreases with increasing distance from the sidewall of the first fin-type pattern.

    Semiconductor device and method of fabricating the same
    6.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US11600518B2

    公开(公告)日：2023-03-07

    申请号：US17308128

    申请日：2021-05-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

    IPC: H01L21/76 ,  H01L21/762 ,  H01L27/088 ,  H01L29/66

    Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

    Semiconductor device and method of fabricating the same
    7.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US11018050B2

    公开(公告)日：2021-05-25

    申请号：US16386704

    申请日：2019-04-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sung Soo Kim ,  Chae Ho Na ,  Gyu Hwan Ahn ,  Dong Hyun Roh ,  Sang Jin Hyun

    IPC: H01L29/66 ,  H01L21/762 ,  H01L27/088

    Abstract: A semiconductor device includes a substrate having first fin and a second fin spaced apart and extending lengthwise in parallel. A fin remnant is disposed between the first fin and the second fin, extends lengthwise in parallel with the first and second fins, and has a height lower than a height of each of the first fin and the second fin. A first field insulation layer is disposed between a sidewall of the first fin and a first sidewall of the fin remnant and a second field insulating layer is disposed on a sidewall of the second fin. A blocking liner conforms to a sidewall and a bottom surface of a trench bounded by a second sidewall of the fin remnant and a sidewall of the second field insulating layer. A trench insulation layer is disposed on the blocking liner in the trench.

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