INTERNAL PRESSURE CONTROL APPARATUS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME

    公开(公告)号:US20240304427A1

    公开(公告)日:2024-09-12

    申请号:US18538419

    申请日:2023-12-13

    Abstract: The present disclosure relates to an internal pressure control apparatus capable of uniformly processing an upper surface of a semiconductor substrate and a substrate processing apparatus including the same. The substrate processing apparatus comprising a chamber housing including an exhaust hole for exhausting a process gas flowing thereinto, a substrate support unit inside the chamber housing, supporting a semiconductor substrate, a process gas supply unit providing the process gas to the inside of the chamber housing, a plasma generating unit generating plasma inside the chamber housing by using the process gas, and a ring body installed around the substrate support unit and provided as one body, and further comprising an internal pressure control apparatus controlling an internal pressure of the chamber housing, wherein the internal pressure control apparatus controls a posture of the ring body to control an exhaust amount of the process gas flowing into the chamber housing.

    APPARATUS AND METHOD FOR TREATING SUBSTRATE

    公开(公告)号:US20230072243A1

    公开(公告)日:2023-03-09

    申请号:US17719680

    申请日:2022-04-13

    Abstract: A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.

    SUBSTRATE PROCESSING APPARATUS
    9.
    发明申请

    公开(公告)号:US20210074558A1

    公开(公告)日:2021-03-11

    申请号:US17016881

    申请日:2020-09-10

    Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

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