公开(公告)号：US20240234096A1

公开(公告)日：2024-07-11

申请号：US18239155

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Nam Jin CHO ,  Yi Hwan KIM ,  Sang Chul HAN ,  Sang Ki NAM ,  Jun Ho LEE ,  Hyun Jae LEE

IPC: H01J37/32 ,  C23C16/26 ,  C23C16/48

CPC classification number: H01J37/3244 ,  C23C16/26 ,  C23C16/48 ,  H01J37/3211 ,  H01J37/32623 ,  H01J2237/3321 ,  H01L21/033

Abstract: A method for fabricating a semiconductor device includes loading a substrate into a lower region in a chamber separated by a shower head into the lower region and an upper region, supplying a source gas to the upper region, generating plasma including ions and radicals in the upper region, using a magnetic field and an electric field generated from an antenna on the upper region, and the source gas, supplying the ions and the radicals generated in the upper region into the lower region through a plurality of plasma inlet holes formed to penetrate the shower head in a vertical direction, supplying a process gas into the lower region through a plurality of process gas supply holes formed in the shower head, and forming a deposition film on the substrate inside the lower region, using the ions, the radicals and the process gas.

公开(公告)号：US20200020551A1

公开(公告)日：2020-01-16

申请号：US16421473

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beom Jin YOO ,  Min Hyoung KIM ,  Sang Ki NAM ,  Lu SIQING ,  Won Hyuk JANG ,  Kyu Hee HAN

IPC: H01L21/67 ,  B08B3/10 ,  H01L21/687

Abstract: A plasma generator, a cleaning liquid processing apparatus including the same, a semiconductor cleaning apparatus, and a cleaning liquid processing method are provided. The cleaning liquid processing apparatus comprising a bubble formation section configured to lower a pressure of a mixed liquid obtained by mixing a liquid and a gas to form bubbles in the mixed liquid, a plasma generator connected to the bubble formation section and configured to apply a voltage to the mixed liquid to form plasma in the bubbles formed in the mixed liquid, a mixing section connected to the plasma generator and configured to dissolve radicals included in the plasma into the mixed liquid, and a discharge nozzle connected to the mixing section and configured to discharge the mixed liquid to a wafer.

公开(公告)号：US20190122860A1

公开(公告)日：2019-04-25

申请号：US15870800

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  KYUHEE HAN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/6831

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20240304427A1

公开(公告)日：2024-09-12

申请号：US18538419

申请日：2023-12-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki NAM ,  Tae-Hyun KIM ,  Sung Ho JANG ,  Seul Gi LEE

IPC: H01J37/32 ,  H01L21/67

CPC classification number: H01J37/32834 ,  H01J37/32449 ,  H01J37/32642 ,  H01L21/67069 ,  H01J2237/3341

Abstract: The present disclosure relates to an internal pressure control apparatus capable of uniformly processing an upper surface of a semiconductor substrate and a substrate processing apparatus including the same. The substrate processing apparatus comprising a chamber housing including an exhaust hole for exhausting a process gas flowing thereinto, a substrate support unit inside the chamber housing, supporting a semiconductor substrate, a process gas supply unit providing the process gas to the inside of the chamber housing, a plasma generating unit generating plasma inside the chamber housing by using the process gas, and a ring body installed around the substrate support unit and provided as one body, and further comprising an internal pressure control apparatus controlling an internal pressure of the chamber housing, wherein the internal pressure control apparatus controls a posture of the ring body to control an exhaust amount of the process gas flowing into the chamber housing.

公开(公告)号：US20230142436A1

公开(公告)日：2023-05-11

申请号：US17865773

申请日：2022-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjoo LEE ,  Sang Ki NAM ,  Young Hyun JO

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32642 ,  H01J37/32449 ,  H01J37/32532

Abstract: Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.

公开(公告)号：US20230072243A1

公开(公告)日：2023-03-09

申请号：US17719680

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Bae KIM ,  Ji Hwan KIM ,  Hyong Seo YOON ,  Sang Ki NAM ,  Hyun Jae LEE ,  Myung Geun JEONG

IPC: H01J37/32

Abstract: A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.

公开(公告)号：US20220351947A1

公开(公告)日：2022-11-03

申请号：US17548775

申请日：2021-12-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kuihyun YOON ,  Sang Ki NAM ,  Kwonsang SEO ,  Sungho JANG ,  Jungmin KO ,  Nam Kyun KIM ,  Tae-Hyun KIM ,  Seunghan BAEK ,  Seungbin AHN ,  Jungmo YANG ,  Changheon LEE ,  Kangmin JEON

IPC: H01J37/32

Abstract: A plasma confinement ring includes a lower ring, an upper ring on the lower ring, and a connection ring extended to connect the lower ring to the upper ring. The lower ring includes a lower center hole vertically penetrating the lower ring at a center of the lower ring and at least one slit penetrating the lower ring in a region outside the lower center hole. The slit is structured to pass a more amount of air or gas at a first portion closer to the center of the lower ring than at a second portion farther from the center of the lower ring.

公开(公告)号：US20210351047A1

公开(公告)日：2021-11-11

申请号：US17381246

申请日：2021-07-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Beom Jin YOO ,  Min Hyoung KIM ,  Sang Ki NAM ,  Won Hyuk JANG ,  Kyu Hee HAN ,  Young Do KIM ,  Jeong Min BANG

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate.

公开(公告)号：US20210074558A1

公开(公告)日：2021-03-11

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki NAM ,  Jang-Yeob LEE ,  Sungyeol KIM ,  Sunghyup KIM ,  Soonam PARK ,  Siqing LU

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.

公开(公告)号：US20190096636A1

公开(公告)日：2019-03-28

申请号：US15940621

申请日：2018-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki NAM ,  Sung Yong LIM ,  Beomjin YOO ,  Jongwoo SUN ,  Kyuhee HAN ,  Kwangyoub HEO ,  Je-Woo HAN

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber including a space for processing a substrate, a substrate stage supporting the substrate within the chamber and including a lower electrode, an upper electrode within the chamber facing the lower electrode, a first power supply including a sinusoidal wave power source configured to apply a sinusoidal wave power to the lower electrode to form plasma within the chamber, and a second power supply configured to apply a nonsinusoidal wave power to the upper electrode to generate an electron beam.