公开(公告)号：US20230142436A1

公开(公告)日：2023-05-11

申请号：US17865773

申请日：2022-07-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjoo LEE ,  Sang Ki NAM ,  Young Hyun JO

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32642 ,  H01J37/32449 ,  H01J37/32532

Abstract: Disclosed are plasma edge rings, plasma etching apparatuses, and plasma etching methods. The plasma etching apparatus comprises a plasma electrode, a plasma edge ring on the plasma electrode, and a guide electrode outside an etching target on the plasma electrode. The plasma edge ring provides a placement hole that vertically penetrates a center of the plasma edge ring, and a recess on a portion of an inner lateral surface that defines the placement hole. The recess is outwardly recessed from the inner lateral surface.