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    CAPACITIVELY-COUPLED PLASMA SUBSTRATE PROCESSING APPARATUS INCLUDING A FOCUS RING AND A SUBSTRATE PROCESSING METHOD USING THE SAME
    3.
    发明申请
    CAPACITIVELY-COUPLED PLASMA SUBSTRATE PROCESSING APPARATUS INCLUDING A FOCUS RING AND A SUBSTRATE PROCESSING METHOD USING THE SAME 审中-公开

    公开(公告)号：US20200335376A1

    公开(公告)日：2020-10-22

    申请号：US16683707

    申请日：2019-11-14

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jongwoo SUN ,  Incheol SONG ,  Hongmin YOON ,  Jihyun LIM ,  Masayuki TOMOYASU ,  Jewoo HAN

    IPC: H01L21/683 ,  H01J37/32

    Abstract: According to some embodiments, a semiconductor substrate processing apparatus includes a housing, a plasma source unit, an electrostatic chuck, and a ring unit. The housing encloses a process chamber. The plasma source unit is connected to the housing, and includes a shower head and a fixing ring positioned to support the shower head. The shower head includes an upper electrode mounted on the fixing ring, and includes injection holes passing through part of the upper electrode and configured to inject gas into the chamber. The electrostatic chuck is connected to the housing and includes a lower electrode, and is for mounting a semiconductor substrate thereon. The ring unit is mounted on an edge portion of the electrostatic chuck, and includes a focus ring and a cover ring surrounding the focus ring. One of the lower electrode and the upper electrode is connected to a high frequency power supply, and the other of the lower electrode and the upper electrode is connected to ground. The focus ring has an inner side surface, and an opposite outer side surface that contacts the cover ring, and a width between the inner side surface and the outer side surface of the focus ring is a first width. The cover ring has an inner side surface that contacts the outer side surface of the focus ring, and an outer side surface, and a width between the inner side surface and the outer side surface of the cover ring is a second width. The first width is between 2 and 10 time the second width.

    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM HAVING THE SAME
    4.
    发明申请
    SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM HAVING THE SAME 有权

    公开(公告)号：US20210027993A1

    公开(公告)日：2021-01-28

    申请号：US16905018

    申请日：2020-06-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungyeon KIM ,  Jungpyo HONG ,  Kwangnam KIM ,  Hyungjun KIM ,  Jongwoo SUN

    IPC: H01J37/32 ,  H01L21/67

    Abstract: A substrate treating apparatus, including a process chamber having a bottom portion configured to secure a substrate while a substrate treating process is performed on the substrate; and a dielectric window arranged at an upper portion of the process chamber to define a process space, and including: an insulative body, an antenna disposed on an upper surface of the insulative body, a protection layer disposed on a lower surface of the insulative body, and an etch resistor protruding from at least a portion of the protection layer toward the process space, wherein, based on power being applied to the antenna, a plasma is generated in the process space, and wherein the insulative body is protected from the plasma by the protection layer and the etch resistor.

    SEMICONDUCTOR MANUFACTURING APPARATUS
    7.
    发明申请
    SEMICONDUCTOR MANUFACTURING APPARATUS 有权

    公开(公告)号：US20210035830A1

    公开(公告)日：2021-02-04

    申请号：US16821415

    申请日：2020-03-17

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwangnam KIM ,  Nohsung KWAK ,  Sungyeon KIM ,  Hyungjun KIM ,  Haejoong PARK ,  Jongwoo SUN ,  Sangrok OH ,  Ilyoung HAN ,  Jungpyo HONG

    IPC: H01L21/67 ,  H01L21/687 ,  H01L21/673 ,  H01L21/677

    Abstract: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

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