公开(公告)号：US20230116739A1

公开(公告)日：2023-04-13

申请号：US17856413

申请日：2022-07-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwi CHO ,  Sung-Yeol KIM ,  Mee Hyun LIM ,  Sung Yong LIM ,  Seong Ha JEONG ,  Woong Jin CHEON

IPC: H01J37/32

Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber comprising a support, the support configured to have mounted thereon a substrate; at least one channel disposed in the chamber and into which a conductive fluid or a non-conductive fluid is configured to be injected; and a control unit. The control unit includes a first pump and a second pump configured to respectively supply the conductive fluid and the non-conductive fluid to the at least one channel; and a first valve configured to receive the conductive fluid and the non-conductive fluid from the first pump and the second pump, respectively, and control proportions at which the conductive fluid and the non-conductive fluid are injected into the at least one channel.

公开(公告)号：US20240312765A1

公开(公告)日：2024-09-19

申请号：US18599825

申请日：2024-03-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Min LEE ,  Myung Jae YOO ,  Sung-Yeol KIM ,  Sang Yeol PARK ,  Sung Yong LIM ,  Eun Suk LIM ,  Min Ju JEONG ,  Yong Won CHO

IPC: H01J37/32

CPC classification number: H01J37/32183 ,  H01J37/3299 ,  H01J2237/24564

Abstract: A substrate processing apparatus including the controller are provided. The controller includes: a signal analyzer configured to detect at least one of an amplitude, phase, and frequency of a first signal, which is provided to a chamber; a radio frequency (RF) signal generator configured to generate an RF signal with a natural frequency based on a power of the first signal; a harmonic controller configured to generate a second signal based on the power of the first signal and at least one of the amplitude, phase, and frequency of the first signal, the second signal having a different amplitude, a different phase, and/or a different frequency from the RF signal; an operator configured to perform an operation on the RF signal and the second signal; and a filter configured to generate an RF control signal by filtering an output signal of the operator.

公开(公告)号：US20190096636A1

公开(公告)日：2019-03-28

申请号：US15940621

申请日：2018-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki NAM ,  Sung Yong LIM ,  Beomjin YOO ,  Jongwoo SUN ,  Kyuhee HAN ,  Kwangyoub HEO ,  Je-Woo HAN

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber including a space for processing a substrate, a substrate stage supporting the substrate within the chamber and including a lower electrode, an upper electrode within the chamber facing the lower electrode, a first power supply including a sinusoidal wave power source configured to apply a sinusoidal wave power to the lower electrode to form plasma within the chamber, and a second power supply configured to apply a nonsinusoidal wave power to the upper electrode to generate an electron beam.