SUBSTRATE SUPPORT, THIN FILM PROCESSING DEVICE, AND THIN FILM DEPOSITION CONTROL METHOD USING THE SAME

    公开(公告)号:US20250075323A1

    公开(公告)日:2025-03-06

    申请号:US18442991

    申请日:2024-02-15

    Abstract: A substrate support according to an embodiment includes: a body portion that has a substrate disposition surface at an upper portion thereof; an RF electrode that is disposed inside the body portion; a heater electrode that is disposed below the RF electrode; and a shaft that is formed on a lower portion surface disposed at an opposite side of the substrate disposition surface and has a hollow. The RF electrode includes a first outer RF electrode surrounding the outside of the substrate disposition surface, an inner RF electrode disposed parallel to the substrate disposition surface below the substrate disposition surface, a second outer RF electrode disposed between the inner RF electrode and the heater electrode, an inner electrode conductor having one end connected to the inner RF electrode to be disposed to penetrate the shaft, and an outer electrode conductor having one end connected to the second outer RF electrode to be disposed to penetrate the shaft, and the first outer RF electrode, the inner RF electrode, and the second outer RF electrode are spaced apart from each other to have a non-contact structure.

    SUBSTRATE PROCESSING APPARATUS
    2.
    发明公开

    公开(公告)号:US20240312765A1

    公开(公告)日:2024-09-19

    申请号:US18599825

    申请日:2024-03-08

    CPC classification number: H01J37/32183 H01J37/3299 H01J2237/24564

    Abstract: A substrate processing apparatus including the controller are provided. The controller includes: a signal analyzer configured to detect at least one of an amplitude, phase, and frequency of a first signal, which is provided to a chamber; a radio frequency (RF) signal generator configured to generate an RF signal with a natural frequency based on a power of the first signal; a harmonic controller configured to generate a second signal based on the power of the first signal and at least one of the amplitude, phase, and frequency of the first signal, the second signal having a different amplitude, a different phase, and/or a different frequency from the RF signal; an operator configured to perform an operation on the RF signal and the second signal; and a filter configured to generate an RF control signal by filtering an output signal of the operator.

    SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD

    公开(公告)号:US20230116739A1

    公开(公告)日:2023-04-13

    申请号:US17856413

    申请日:2022-07-01

    Abstract: A substrate processing apparatus is provided. The substrate processing apparatus includes a chamber comprising a support, the support configured to have mounted thereon a substrate; at least one channel disposed in the chamber and into which a conductive fluid or a non-conductive fluid is configured to be injected; and a control unit. The control unit includes a first pump and a second pump configured to respectively supply the conductive fluid and the non-conductive fluid to the at least one channel; and a first valve configured to receive the conductive fluid and the non-conductive fluid from the first pump and the second pump, respectively, and control proportions at which the conductive fluid and the non-conductive fluid are injected into the at least one channel.

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