公开(公告)号：US20190122860A1

公开(公告)日：2019-04-25

申请号：US15870800

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  KYUHEE HAN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/6831

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20190279846A1

公开(公告)日：2019-09-12

申请号：US16421433

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongkwang LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  Kyuhee HAN

IPC: H01J37/32

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20190122866A1

公开(公告)日：2019-04-25

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira KOSHIISHI ,  Kwangyoub HEO ,  Sunggil KANG ,  Beomjin YOO ,  Sungyong LIM ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US20190096636A1

公开(公告)日：2019-03-28

申请号：US15940621

申请日：2018-03-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki NAM ,  Sung Yong LIM ,  Beomjin YOO ,  Jongwoo SUN ,  Kyuhee HAN ,  Kwangyoub HEO ,  Je-Woo HAN

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a chamber including a space for processing a substrate, a substrate stage supporting the substrate within the chamber and including a lower electrode, an upper electrode within the chamber facing the lower electrode, a first power supply including a sinusoidal wave power source configured to apply a sinusoidal wave power to the lower electrode to form plasma within the chamber, and a second power supply configured to apply a nonsinusoidal wave power to the upper electrode to generate an electron beam.