公开(公告)号：US20190122866A1

公开(公告)日：2019-04-25

申请号：US15983178

申请日：2018-05-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Ki Nam ,  Akira KOSHIISHI ,  Kwangyoub HEO ,  Sunggil KANG ,  Beomjin YOO ,  Sungyong LIM ,  Vasily PASHKOVSKIY

IPC: H01J37/32 ,  H01L21/66 ,  H01L21/3065

Abstract: Disclosed are a plasma processing apparatus and a method of manufacturing a semiconductor device using the same. The plasma processing apparatus comprises a chamber, an electrostatic chuck in the chamber and loading a substrate, a plasma electrode generating an upper plasma on the electrostatic chuck; and a hollow cathode between the plasma electrode and the electrostatic chuck, wherein the hollow cathode generates a lower plasma below the upper plasma. The hollow cathode comprises cathode holes each having a size less than a thickness of a plasma sheath of the upper plasma.

公开(公告)号：US20230071985A1

公开(公告)日：2023-03-09

申请号：US17749800

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Minhyoung KIM ,  Inseong KIM ,  Seokyoung PARK ,  Sangjin AN ,  Inhye JEONG ,  Kyusik CHOI

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/66

Abstract: A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.

公开(公告)号：US20220301827A1

公开(公告)日：2022-09-22

申请号：US17685097

申请日：2022-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Inseong KIM ,  Gonjun KIM ,  Younghoo KIM

IPC: H01J37/32 ,  H01L21/683

Abstract: A manufacturing method includes depositing a chamber protective layer in a chamber, supplying a first purge gas to the chamber, transferring a substrate to the chamber, the substrate being disposed inside an edge ring on an electrostatic chuck, processing the substrate, supplying a second purge gas to the chamber, transferring the substrate to an outside of the chamber, removing the chamber protective layer, and supplying a third purge gas to the chamber. Variation of the surface roughness of the edge ring may be minimal. A ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate in the processing the substrate may be 0.05 to 19. The flow rate ratio may be more than 1 in the supplying the second purge gas.

公开(公告)号：US20190279846A1

公开(公告)日：2019-09-12

申请号：US16421433

申请日：2019-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeongkwang LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  Kyuhee HAN

IPC: H01J37/32

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.

公开(公告)号：US20240159657A1

公开(公告)日：2024-05-16

申请号：US18202663

申请日：2023-05-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sejin OH ,  Sunggil KANG ,  Sangki NAM ,  Jeongmin BANG ,  Dougyong SUNG ,  Yeongkwang LEE ,  Sungho JANG ,  Jonghun PI

IPC: G01N21/25 ,  G01N21/31 ,  H01L21/67

CPC classification number: G01N21/255 ,  G01N21/3103 ,  H01L21/67069 ,  G01N2201/061 ,  G01N2201/062

Abstract: Provided is an apparatus configured to measure radical spatial density distribution including a process chamber including a viewport, a driving device configured to move a moving wall inside the process chamber, a light source configured to generate light, a collimator disposed in the viewport of the process chamber and configured to transmit light received from the light source to the moving wall and receive light reflected from the moving wall, and a spectrometer configured to receive the reflected light from the collimator, and measure radical spatial density based on analyzing an absorption amount of a spectrum of the received light.

公开(公告)号：US20210098232A1

公开(公告)日：2021-04-01

申请号：US16860745

申请日：2020-04-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sangjin AN ,  Minseop PARK ,  Chanyeong JEONG ,  Sunggil KANG ,  Yeongkwang LEE

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/683

Abstract: A substrate processing apparatus includes a process chamber including a plasma generation region configured to receive at least one first process gas and have first radio-frequency (RF) power applied thereto, to generate plasma; a gas distribution region configured to supply the at least one first process gas to the plasma generation region; a gas mixing region configured to receive at least one second process gas and radicals generated in the plasma generation region to generate an etchant based on the radicals being mixed with the at least one second process gas; a pedestal on which a substrate is disposed; a processing region in which the pedestal is installed; and a shower head configured to supply the etchant from the gas mixing region to the processing region, the substrate disposed on the pedestal being processed by the etchant. The gas mixing region is separate from each of the plasma generation region and the processing region.

公开(公告)号：US20190122860A1

公开(公告)日：2019-04-25

申请号：US15870800

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： YEONGKWANG LEE ,  Sunggil KANG ,  Sang Ki NAM ,  Kwangyoub HEO ,  KYUHEE HAN

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/3244 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/6831

Abstract: A chamber has an upper housing and a lower housing and receives a reaction gas. A first plasma source includes electron beam sources providing electron beams into the upper housing to generate an upper plasma. A second plasma source includes holes generating a lower plasma within the holes connecting the upper housing and the lower housing. Radicals of the upper plasma, radicals of the lower plasma, and ions of the lower plasma are provided, through the holes, to the lower housing so that the lower housing has radicals and ions at a predetermined ratio of the ions to the radicals in concentration. The second plasma source divides the chamber into the upper housing and the lower housing. A wafer chuck is positioned in the lower housing to receive a wafer.