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    SEMICONDUCTOR PROCESSING APPARATUS USING PLASMA
    2.
    发明申请
    SEMICONDUCTOR PROCESSING APPARATUS USING PLASMA 有权

    公开(公告)号：US20250014871A1

    公开(公告)日：2025-01-09

    申请号：US18406898

    申请日：2024-01-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sungwon CHO ,  Kyunghyun KIM ,  Ingi KIM ,  Sangki NAM ,  Dougyong SUNG ,  Sejin OH ,  Sungho JANG

    IPC: H01J37/32 ,  H01L21/683

    Abstract: According to an aspect of the present inventive concepts, a semiconductor processing apparatus includes: a chamber; an electrostatic chuck in an internal space of the chamber; a plurality of grid electrodes installed on the electrostatic chuck so as to be separated from each other in a first direction, perpendicular to an upper surface of the electrostatic chuck, and respectively having a plurality of through-holes; a plurality of reflectors between the plurality of grid electrodes and the electrostatic chuck and reflecting ions passing through the plurality of through-holes in each of the plurality of grid electrodes; and a voltage supply unit outputting a bias voltage having a predetermined cycle to at least one of the plurality of grid electrodes, wherein each of the plurality of grid electrodes includes a base plate containing a conductive material, and a cover layer covering a surface of the base plate and containing a metal oxide.

    POST BAKING APPARATUS
    3.
    发明公开
    POST BAKING APPARATUS 审中-公开

    公开(公告)号：US20240192604A1

    公开(公告)日：2024-06-13

    申请号：US18216028

    申请日：2023-06-29

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jaehong LIM ,  Youngho HWANG ,  Byungjo KIM ,  Sangki NAM ,  Suyoung YOO ,  Sanghyun LIM ,  Youngkyun IM ,  Hyungkyu CHOI ,  Seok HEO

    IPC: G03F7/40

    CPC classification number: G03F7/40

    Abstract: A post baking apparatus comprising a baking chamber configured to receive a substrate with an exposed photoresist film, a lower heater in the baking chamber under the substrate to heat the exposed photoresist film, an applier applying an electric field or a magnetic field to the exposed photoresist film along a vertical direction, which is substantially perpendicular to an upper surface of the exposed photoresist film, to control diffusions of an acid or a secondary electron, which are generated from the exposed photoresist film, along a horizontal direction, and a controller configured to control an operation of the applier.

    METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF
    4.
    发明申请
    METHODS OF PROCESSING SUBSTRATES AND APPARATUSES THEREOF 有权

    公开(公告)号：US20250140536A1

    公开(公告)日：2025-05-01

    申请号：US19009252

    申请日：2025-01-03

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

    IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

    Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.

    SUBSTRATE PROCESSING APPARATUS
    5.
    发明公开
    SUBSTRATE PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20230317418A1

    公开(公告)日：2023-10-05

    申请号：US18068778

    申请日：2022-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jungmin KO ,  Sangki NAM ,  Dougyong SUNG ,  Byeongsang KIM ,  Yunhwan KIM ,  Suyoung YOO ,  Namkyun KIM ,  Kuihyun YOON

    IPC: H01J37/32

    CPC classification number: H01J37/3244 ,  H01J37/32568 ,  H01J2237/3343 ,  H01J2237/2001

    Abstract: A substrate processing apparatus includes a process chamber having an internal space; upper and lower electrode portions facing each other in the internal space; and a gas supply unit configured to supply cooling gas to a bottom surface of a substrate seated on the lower electrode portion. The gas supply unit may include a gas supply source outside the process chamber and configured to provide a cooling gas, and a gas filter connected to the gas supply source and including one or more wall surfaces at least partially defining a gas flow path for the cooling gas. The gas filter may include a first and second regions formed of respective materials having different dielectric constants. The first and second regions may be configured so that the cooling gas flowing along the gas flow path flows upwardly concurrently with colliding with a wall surface of the gas flow path.

    SUBSTRATE PROCESSING APPARATUS
    7.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 有权

    公开(公告)号：US20210384012A1

    公开(公告)日：2021-12-09

    申请号：US17173702

    申请日：2021-02-11

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jinhyuk CHOI ,  Siqing LU ,  Sangki NAM ,  Keesoo PARK ,  Soonam PARK

    IPC: H01J37/32

    Abstract: A substrate processing apparatus includes a chamber housing with an upper portion opened, the chamber housing defining a reaction space, a susceptor configured to support a substrate in the chamber housing, and a dielectric cover covering an upper portion of the chamber housing. The dielectric cover includes a dielectric lid, and a mode modifying assembly arranged around the dielectric lid to be spaced apart from the dielectric lid, the mode modifying assembly configured to adjust a distance from the dielectric lid.

    PLASMA MONITORING SYSTEM AND METHOD OF MONITORING PLASMA
    8.
    发明公开
    PLASMA MONITORING SYSTEM AND METHOD OF MONITORING PLASMA 审中-公开

    公开(公告)号：US20240274419A1

    公开(公告)日：2024-08-15

    申请号：US18529011

    申请日：2023-12-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kwangho LEE ,  Sangki NAM ,  Jitae PARK ,  Seongjin IN ,  Keonhee LIM ,  Sungho JANG

    IPC: H01J37/32

    CPC classification number: H01J37/32972 ,  H01J37/32926

    Abstract: A plasma monitoring system includes a chamber with an internal space configured to perform a plasma process on a semiconductor substrate, the chamber including a view window and a substrate stage, a light transmitter on the view window and including optical fibers configured to obtain a first light generated during the plasma process, a detachable reflection mirror between the view window and the optical fibers, a light generator configured to irradiate a second light onto the reflection mirror through the optical fibers and to irradiate a third light onto the view window through the optical fibers, and a light analyzer configured to obtain a light spectrum from the first light, to correct the light spectrum based on the second light reflected from the reflection mirror, and to correct the light spectrum based on the third light reflected from the view window.

    SEMICONDUCTOR PROCESS DEVICE
    9.
    发明公开
    SEMICONDUCTOR PROCESS DEVICE 审中-公开

    公开(公告)号：US20240047247A1

    公开(公告)日：2024-02-08

    申请号：US18184418

    申请日：2023-03-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Chansoo KANG ,  Daewon KANG ,  Sangki NAM ,  Jungmo YANG ,  Changsoon LIM ,  Sungho JANG ,  Jonghun PI ,  Youngil KANG ,  Yoonjae KIM ,  Ilwoo KIM ,  Jongmu KIM ,  Yongbeom PARK

    IPC: H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/67253 ,  H01J37/32944 ,  H01J2237/221

    Abstract: A semiconductor process device includes a chamber housing defining an internal region and a plurality of electrostatic chucks within the internal region. The chamber housing includes a window, and a light collection unit including a first optical system and a second optical system located at different positions on the window. A plurality of first optical pickup units are connected to the first optical system, and a plurality of second optical pickup units are connected to the second optical system. A sensor includes a plurality of photodetectors that are configured to convert a first optical signal transmitted by the plurality of first optical pickup units and a second optical signal transmitted by the plurality of second optical pickup units into electrical signals. A processor is configured to generate a spatial image of the internal region of the chamber housing using the electrical signals output by the plurality of photodetectors, and determine a location at which an arc occurs in the internal region of the chamber housing based on the spatial image.

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