公开(公告)号：US20210151300A1

公开(公告)日：2021-05-20

申请号：US17021166

申请日：2020-09-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jieun JUNG ,  Siqing LU ,  Soonam PARK ,  Kyuhee HAN

IPC: H01J37/32

Abstract: A substrate processing apparatus and a method of manufacturing a semiconductor device, the apparatus including a plasma region in which plasma is generated; a processing region in which a substrate is processable; a shower head including a first channel and a second channel, the first channel being a passage through which the plasma flows between the plasma region and the processing region and the second channel being a passage through which a process gas is supplied to the processing region, the first channel and the second channel being separated from each other; a substrate support supporting the substrate in the processing region; and a cooler configured to supply a cooling fluid to a cooling channel of the substrate support.

公开(公告)号：US20210110997A1

公开(公告)日：2021-04-15

申请号：US16850252

申请日：2020-04-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongkyu SHIN ,  Sangki NAM ,  Soonam PARK ,  Akira KOSHIISHI ,  Kyuhee HAN

IPC: H01J37/32 ,  H01J37/063 ,  H01L21/67 ,  H01L21/683 ,  H01L21/3065

Abstract: An electron beam generator, a plasma processing apparatus, and a plasma processing method, the electron beam generator including a side insulator configured to surround the substrate support, the side insulator having an electron beam chamber therein; a first electrode embedded in the side insulator and adjacent to a first side wall of the electron beam chamber; a second electrode on a second side wall of the electron beam chamber; and a guide in an outlet of the electron beam chamber, the guide including slits through which electron beams generated in the electron beam chamber are transmittable into the process chamber.

公开(公告)号：US20210384012A1

公开(公告)日：2021-12-09

申请号：US17173702

申请日：2021-02-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinhyuk CHOI ,  Siqing LU ,  Sangki NAM ,  Keesoo PARK ,  Soonam PARK

IPC: H01J37/32

Abstract: A substrate processing apparatus includes a chamber housing with an upper portion opened, the chamber housing defining a reaction space, a susceptor configured to support a substrate in the chamber housing, and a dielectric cover covering an upper portion of the chamber housing. The dielectric cover includes a dielectric lid, and a mode modifying assembly arranged around the dielectric lid to be spaced apart from the dielectric lid, the mode modifying assembly configured to adjust a distance from the dielectric lid.

公开(公告)号：US20210074558A1

公开(公告)日：2021-03-11

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki NAM ,  Jang-Yeob LEE ,  Sungyeol KIM ,  Sunghyup KIM ,  Soonam PARK ,  Siqing LU

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.