公开(公告)号：US20210074558A1

公开(公告)日：2021-03-11

申请号：US17016881

申请日：2020-09-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Ki NAM ,  Jang-Yeob LEE ,  Sungyeol KIM ,  Sunghyup KIM ,  Soonam PARK ,  Siqing LU

IPC: H01L21/67 ,  H01J37/32

Abstract: A substrate processing apparatus, including a processing chamber including a first internal space and a second internal space arranged in a vertical direction, the first internal space being configured to receive process gas to generate plasma; an induction electrode configured to divide the processing chamber, and having a plurality of through-holes arranged to connect the first internal space and the second internal space, wherein the plurality of through-holes are configured to induce an ion beam extracted from ions included in the plasma generated in the first internal space; a radical supply located in the second internal space, and including a reservoir configured to receive chemical liquid in which an object to be processed is immersed, and a lower electrode configured to apply nanopulses to the reservoir to generate radicals from the chemical liquid; and a chemical liquid supply configured to supply the chemical liquid to the reservoir.