公开(公告)号：US20220301827A1

公开(公告)日：2022-09-22

申请号：US17685097

申请日：2022-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Inseong KIM ,  Gonjun KIM ,  Younghoo KIM

IPC: H01J37/32 ,  H01L21/683

Abstract: A manufacturing method includes depositing a chamber protective layer in a chamber, supplying a first purge gas to the chamber, transferring a substrate to the chamber, the substrate being disposed inside an edge ring on an electrostatic chuck, processing the substrate, supplying a second purge gas to the chamber, transferring the substrate to an outside of the chamber, removing the chamber protective layer, and supplying a third purge gas to the chamber. Variation of the surface roughness of the edge ring may be minimal. A ratio of an edge gas flow rate of gas supplied to an edge of the substrate and the edge ring to a central gas flow rate of gas supplied to a central portion of the substrate in the processing the substrate may be 0.05 to 19. The flow rate ratio may be more than 1 in the supplying the second purge gas.

公开(公告)号：US20230071985A1

公开(公告)日：2023-03-09

申请号：US17749800

申请日：2022-05-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woorim LEE ,  Sunggil KANG ,  Minhyoung KIM ,  Inseong KIM ,  Seokyoung PARK ,  Sangjin AN ,  Inhye JEONG ,  Kyusik CHOI

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/3065 ,  H01L29/66

Abstract: A substrate processing apparatus includes first to fourth sets of inner surfaces that at least partially define a plasma forming region, a gas supply region, gas mixing region, and a substrate processing region, respectively, where the substrate processing apparatus is configured to form a plasma within the plasma forming region, supply a process gas from the gas supply region to the plasma forming region, form an etchant in the gas mixing region based on recombination of radicals supplied from the plasma forming region, and process a substrate based on the etchant within the substrate processing region; a shower head between the gas mixing region and the substrate processing region and configured to supply the etchant to the substrate processing region; a coating layer covering a surface of the shower head and including nickel (Ni) containing phosphorus (P); and a heater configured to control a surface temperature of the shower head.