公开(公告)号：US20230072243A1

公开(公告)日：2023-03-09

申请号：US17719680

申请日：2022-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Bae KIM ,  Ji Hwan KIM ,  Hyong Seo YOON ,  Sang Ki NAM ,  Hyun Jae LEE ,  Myung Geun JEONG

IPC: H01J37/32

Abstract: A substrate treatment apparatus including a chamber; a lower electrode in the chamber, wherein the substrate is on the lower electrode; an upper electrode in the chamber, and above the lower electrode; a pulse signal generator configured to generate a pulse signal; and a bias power supply configured to generate bias power having a pulsed non-sinusoidal waveform using the pulse signal, and supply the generated bias power to the lower electrode, wherein the bias power supply includes a DC power generator configured to receive the pulse signal and generate a direct-current (DC) voltage subjected to feedforward compensation based on the pulse signal; and a modulator configured to generate a power signal having a non-sinusoidal waveform using the DC voltage, and filter the power signal using the pulse signal to generate the bias power having the pulsed non-sinusoidal waveform.