公开(公告)号：US20250102906A1

公开(公告)日：2025-03-27

申请号：US18420038

申请日：2024-01-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon JEON ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Changheon LEE ,  Kyuhyun IM ,  Jungha CHAE ,  Minyoung HA

IPC: G03F7/004 ,  C07F7/22

Abstract: Provided are an organometallic compound represented by one of Formulae 1-1 to 1-4, a resist composition including the same, and a pattern formation method using the resist composition: M11, Q11 to Q14, b11 to b14, R11 to R14, Y11 to Y13, and X11 to X14 in Formulae 1-1 to 1-4 are as described in the specification.

公开(公告)号：US20240319592A1

公开(公告)日：2024-09-26

申请号：US18491310

申请日：2023-10-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Kyuhyun IM ,  Jinwon JEON ,  Jungha CHAE ,  Sunghyun HAN

IPC: G03F7/004 ,  G03F7/038

CPC classification number: G03F7/0042 ,  G03F7/0048 ,  G03F7/0382

Abstract: Provided are a resist composition and a method of forming a pattern using the same, wherein the resist composition may include an organometallic compound represented by Formula 1 below, and a polymer including a repeating unit represented by Formula 2 below.




For a description of M11, R11, R12, n, A21, L21 to L23, A21 to a23, R21 to R22, b22, and p in Formula 1 and Formula 2, the specification is referred to.

公开(公告)号：US20250147419A1

公开(公告)日：2025-05-08

申请号：US18620240

申请日：2024-03-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha CHAE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Mijeong KIM ,  Sunyoung LEE ,  Jiyoun LEE ,  Changheon LEE ,  Jinwon JEON

IPC: G03F7/027

Abstract: Provided are a resist composition and a pattern formation method using the same, the resist composition including a first organometallic compound represented by one of Formulae 1-1 to 1-4 and a second organometallic compound represented by Formula 2: wherein M11, M21, L11 to L14, L21 to L24, a11 to a14, a21 to a24, R11 to R14, R21 to R24, b11 to b14, b21 to b24, Y11 to Y13, and X11 to X13 in Formulae 1-1 to 1-4 and 2 are as described in the specification.

公开(公告)号：US20240094633A1

公开(公告)日：2024-03-21

申请号：US18150012

申请日：2023-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jungha CHAE ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Minsang KIM ,  Hana KIM ,  Hyeran KIM ,  Youngmin NAM ,  Changheon LEE ,  Kyuhyun IM

IPC: G03F7/004 ,  C07C65/30 ,  G03F7/20

CPC classification number: G03F7/0045 ,  C07C65/30 ,  G03F7/2006

Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the carboxylate salt represented by Formula 1, and a method of forming a pattern by using the photoresist composition






wherein, in Formula 1, A11, R11 to R15, b15, n11, n12, and M+ are described in the specification.

公开(公告)号：US20240337928A1

公开(公告)日：2024-10-10

申请号：US18613810

申请日：2024-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hana KIM ,  Haengdeog KOH ,  Hyeran KIM ,  Youngmin NAM ,  Giyoung SONG ,  Changheon LEE ,  Aram JEON ,  Jungha CHAE ,  Songse YI ,  Sukkoo HONG

IPC: G03F7/004

CPC classification number: G03F7/0045

Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.




A description of Formula 1 is provided herein.

公开(公告)号：US20240302268A1

公开(公告)日：2024-09-12

申请号：US18664157

申请日：2024-05-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Junghui CHOI ,  Keunbum LEE ,  Changwoo JUNG ,  Buyoun LEE ,  Changheon LEE ,  Sangki CHO

IPC: G01N21/29 ,  G01N21/21 ,  G01N21/85 ,  G01N33/00

CPC classification number: G01N21/29 ,  G01N33/0047 ,  G01N2021/216 ,  G01N2021/8578 ,  G01N2201/0221

Abstract: An air quality measuring device, according to one embodiment of the present disclosure, includes a top case, a bottom case provided below the top case, a circular light guide unit which is disposed between the top case and the bottom case. The air quality measuring device has an outer portion and an inner portion, and includes a coupling boss positioned around the outer portion so as to be coupled to the top case or the bottom case. The air quality measuring device also includes a light source unit positioned on the inner portion, where the light guide unit has a light exit surface formed on the outer portion and may include a rib which is positioned around the outer portion and protrudes from one surface thereof.

公开(公告)号：US20240199540A1

公开(公告)日：2024-06-20

申请号：US18312825

申请日：2023-05-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hoyoon PARK ,  Hana KIM ,  Kyuhyun IM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Hyeran KIM ,  Changheon LEE

IPC: C07C323/09 ,  G03F7/004 ,  G03F7/20

CPC classification number: C07C323/09 ,  G03F7/0042 ,  G03F7/2004 ,  G03F7/2059 ,  C07C2601/16

Abstract: Provided are a carboxylate salt represented by Formula 1, a photoresist composition including the same, and a pattern forming method using the same:






wherein A11, L11, L12, a11, a12, R11 to R13, b13, n11, n12, and M+ in Formula 1 are defined as described in the specification.

公开(公告)号：US20220139714A1

公开(公告)日：2022-05-05

申请号：US17319503

申请日：2021-05-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01L21/3065 ,  H01L21/67 ,  H01J37/32

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.

公开(公告)号：US20250004370A1

公开(公告)日：2025-01-02

申请号：US18392365

申请日：2023-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Beomseok KIM ,  Minsang KIM ,  Haengdeog KOH ,  Yoonhyun KWAK ,  Chanjae AHN ,  Changheon LEE ,  Kyuhyun IM ,  Sungwon CHOI

IPC: G03F7/038 ,  C08F12/22 ,  G03F7/004 ,  G03F7/20

Abstract: Provided are a polymer including a first repeating unit represented by Formula 1, a resist composition including the polymer, and a method of forming a pattern using the resist composition: wherein descriptions of L11 to L14, a11 to a13, A11, X11, R11, R12, b12 and p in Formula 1 are provided in the present specification.

公开(公告)号：US20240038510A1

公开(公告)日：2024-02-01

申请号：US18469208

申请日：2023-09-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changheon LEE ,  Sangki NAM ,  Taesun SHIN

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32834 ,  H01L21/3065 ,  H01L21/67069 ,  H01J37/3244 ,  H01J37/32091 ,  H01J37/32642 ,  H01J37/32743 ,  H01J37/32568 ,  H01J37/3211 ,  H01J2237/334

Abstract: A substrate processing method includes inserting a substrate from an outside into a processing space, supplying a process gas from a gas supply unit to the processing space, producing plasma based on the process gas, performing an etching process for the substrate using ions included in the plasma, and discharging a processed gas produced in the etching process through a discharge part. The discharge part includes a first slit extending through a flange part, and a second slit connected to the first slit while extending through a side wall part connected to the flange part. A vertical length of the first slit is equal to a vertical length of the second slit. A horizontal length of the first slit is about 5 times to about 7 times the vertical length of the first slit.