公开(公告)号：US20250120150A1

公开(公告)日：2025-04-10

申请号：US18674359

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baekwon PARK ,  Minseok YOO ,  Alum JUNG ,  Minsu SEOL ,  Hyungjun YOUN

IPC: H01L29/18 ,  H01L21/02 ,  H01L29/786

Abstract: A thin film structure according to various example embodiments includes a first buffer layer, a transition metal dichalcogenide layer on the first buffer layer, and a second buffer layer on the transition metal dichalcogenide layer, wherein the second buffer layer includes same chalcogen element as a chalcogen element included in the transition metal dichalcogenide layer.

公开(公告)号：US20240021679A1

公开(公告)日：2024-01-18

申请号：US18350433

申请日：2023-07-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Keunwook SHIN ,  Minseok YOO

IPC: H01L29/24 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78 ,  H01L29/775

CPC classification number: H01L29/24 ,  H01L29/66969 ,  H01L29/78696 ,  H01L29/7853 ,  H01L29/775 ,  H01L29/04

Abstract: A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.

公开(公告)号：US20230036321A1

公开(公告)日：2023-02-02

申请号：US17831950

申请日：2022-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Junyoung KWON ,  Minseok YOO

IPC: H01L29/10 ,  H01L29/78 ,  H01L29/417 ,  H01L21/8238

Abstract: Provided are a layer structure including a configuration capable of increasing the operation characteristics of a device including the layer structure, a method of manufacturing the layer structure, an electronic device including the layer structure, and an electronic apparatus including the electronic device. The layer structure includes a first layer and a second layer on one surface of the first layer and facing the first layer. The first layer and the second layer overlap each other. One layer of the first layer and the second layer has a trace of applied strain, and an other layer of the first layer and the second layer is a strain-inducing layer that applies a strain to the one layer.

公开(公告)号：US20240178307A1

公开(公告)日：2024-05-30

申请号：US18518729

申请日：2023-11-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Sungil PARK ,  Jaehyun PARK ,  Kyung-Eun BYUN ,  Eunkyu LEE ,  Junyoung KWON ,  Minseok YOO

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/78391

Abstract: A semiconductor device may include a multi-layer gate dielectric layer and an electronic apparatus including the semiconductor device. The semiconductor device may include a channel layer including a two-dimensional semiconductor material, a gate dielectric layer on a first area of the channel layer, a gate electrode on the gate dielectric layer, and source and drain electrodes in a second area of the channel layer. The gate dielectric layer may include a high-k dielectric layer and an intermediate dielectric layer. The intermediate dielectric layer may be between the high-k dielectric layer and the channel layer. A dielectric constant of the intermediate dielectric layer may be less than a dielectric constant of the high-k dielectric layer.

公开(公告)号：US20240038903A1

公开(公告)日：2024-02-01

申请号：US18483058

申请日：2023-10-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO ,  Minhyun LEE

IPC: H01L29/786 ,  H01L29/41 ,  H01L29/417 ,  H01L29/24 ,  H01L29/66 ,  H01L29/45 ,  H01L29/06 ,  H01L21/02 ,  H01L21/8234 ,  H01L29/16

CPC classification number: H01L29/78696 ,  H01L29/413 ,  H01L29/41733 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/45 ,  H01L29/0665 ,  H01L21/02417 ,  H01L21/02568 ,  H01L21/823412 ,  H01L29/1606

Abstract: Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.

公开(公告)号：US20240021676A1

公开(公告)日：2024-01-18

申请号：US18331463

申请日：2023-06-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Minsu SEOL ,  Junyoung KWON ,  Keunwook SHIN ,  Minseok YOO

IPC: H01L29/18 ,  H01L29/423 ,  H01L29/786 ,  H01L29/417 ,  H01L29/06 ,  H01L29/775 ,  H10B10/00 ,  H10B43/27

CPC classification number: H01L29/18 ,  H01L29/42392 ,  H01L29/78696 ,  H01L29/41733 ,  H01L29/0673 ,  H01L29/775 ,  H10B10/125 ,  H10B43/27

Abstract: A semiconductor device includes a channel including a two-dimensional (2D) semiconductor material, a source electrode and a drain electrode electrically connected to opposite sides of the channel, respectively, a transition metal oxide layer on the channel and including a transition metal oxide, a dielectric layer on the transition metal oxide layer and including a high-k material, and a gate electrode on the dielectric layer.

公开(公告)号：US20220077321A1

公开(公告)日：2022-03-10

申请号：US17370480

申请日：2021-07-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Minhyun LEE ,  Junyoung KWON ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/423 ,  H01L29/76 ,  H01L21/02 ,  H01L29/66

Abstract: Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.

公开(公告)号：US20240170562A1

公开(公告)日：2024-05-23

申请号：US18366366

申请日：2023-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Kyung-Eun BYUN ,  Changseok LEE ,  Minseok YOO

IPC: H01L29/76 ,  H01L29/24 ,  H01L29/66

CPC classification number: H01L29/7606 ,  H01L29/24 ,  H01L29/66969

Abstract: A semiconductor device may include a first two-dimensional (2D) material layer, a second 2D material layer, a first electrode, a second electrode, a third electrode, a first gate electrode. and a second gate electrode. A Fermi-level may be pinned on an interfacial surface between the first 2D material layer and the first electrode. The Fermi-level may be depinned on an interfacial surface between the second 2D material layer and the first electrode.

公开(公告)号：US20230112883A1

公开(公告)日：2023-04-13

申请号：US17690376

申请日：2022-03-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minsu SEOL ,  Keunwook SHIN ,  Junyoung KWON ,  Minseok YOO ,  Changseok LEE

IPC: H01L29/76 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: Provided are a two-dimensional material structure, a semiconductor device including the two-dimensional material structure, and a method of manufacturing the semiconductor device. The two-dimensional material structure may include a first insulator including a first dielectric material; a second insulator on the first insulator and including a second dielectric material; a first two-dimensional material film on an exposed surface of the first insulator; and a second two-dimensional material film provided on an exposed surface of the second insulator. The first and second two-dimensional material films may include a two-dimensional material having a two-dimensional layered structure, and the second two-dimensional material film may include more layers of the two-dimensional material than the first two-dimensional material film.

公开(公告)号：US20230061267A1

公开(公告)日：2023-03-02

申请号：US17673239

申请日：2022-02-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junyoung KWON ,  Minsu SEOL ,  Hyeonjin SHIN ,  Minseok YOO

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L29/417 ,  H01L29/66 ,  H01L29/40

Abstract: An electronic device including a two-dimensional material is provided. The electronic device may include a substrate; a metal layer on a partial region of the substrate; a two-dimensional material layer over the metal layer and an upper surface of the substrate; and an insertion layer between the metal layer and the two-dimensional material layer.