公开(公告)号：US20250120150A1

公开(公告)日：2025-04-10

申请号：US18674359

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Baekwon PARK ,  Minseok YOO ,  Alum JUNG ,  Minsu SEOL ,  Hyungjun YOUN

IPC: H01L29/18 ,  H01L21/02 ,  H01L29/786

Abstract: A thin film structure according to various example embodiments includes a first buffer layer, a transition metal dichalcogenide layer on the first buffer layer, and a second buffer layer on the transition metal dichalcogenide layer, wherein the second buffer layer includes same chalcogen element as a chalcogen element included in the transition metal dichalcogenide layer.