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    Integrated circuit devices
    2.
    发明授权
    Integrated circuit devices 有权

    公开(公告)号：US11437089B2

    公开(公告)日：2022-09-06

    申请号：US17245334

    申请日：2021-04-30

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Taesung Kang ,  Youngkyu Lee ,  Kyoungmin Kim ,  Ilgweon Kim ,  Bokyeon Won ,  Seokjae Lee ,  Sungho Jang ,  Joon Han

    IPC分类号： G11C11/4091 ,  H01L27/108

    摘要： An integrated circuit device includes a sense amplifier configured to sense a voltage change of a bit line, wherein the sense amplifier includes: a sense amplifier unit connected to the bit line and a complementary bit line, configured to sense the voltage change of the bit line in response to a control signal, configured to adjust voltages of a sensing bit line and a complementary sensing bit line based on the sensed voltage change, and including a first PMOS transistor and a first NMOS transistor; and a first offset canceling unit connecting the bit line to the complementary sensing bit line in response to an offset canceling signal, and including a first offset canceling transistor arranged between the first NMOS transistor and the first PMOS transistor, wherein the first offset canceling transistor shares a common impurity region with the first NMOS transistor.

    Memory device having sub wordline driver
    5.
    发明授权
    Memory device having sub wordline driver 有权

    公开(公告)号：US12106795B2

    公开(公告)日：2024-10-01

    申请号：US17724006

    申请日：2022-04-19

    申请人： Samsung Electronics Co., Ltd.

    发明人： Myeongsik Ryu ,  Bokyeon Won ,  Kyoungmin Kim ,  Donggeon Kim ,  Sangwook Park ,  Inseok Baek

    IPC分类号： G11C11/408

    CPC分类号： G11C11/4085

    摘要： A memory device includes a first sub wordline driver including a first active region connected to a first wordline through a first direct contact, and a first transistor connected to a first gate line, the first gate line and the first wordline extending in a first direction, and a second sub wordline driver including a second active region connected to a second wordline through a second direct, the second direct contact and first direct contact extending in parallel in a second direction, the second direction being perpendicular to the first direction. A second transistor is connected to a second gate line. The second gate line extends in the first direction. A third wordline driven by a third sub wordline driver is between the first wordline and the second wordline.

    SUB-WORD-LINE DRIVERS AND SEMICONDUCTOR MEMORY DEVICES INCLUDING THE SAME
    8.
    发明申请
    SUB-WORD-LINE DRIVERS AND SEMICONDUCTOR MEMORY DEVICES INCLUDING THE SAME 有权

    公开(公告)号：US20220406360A1

    公开(公告)日：2022-12-22

    申请号：US17685849

    申请日：2022-03-03

    申请人： Samsung Electronics Co., Ltd.

    发明人： Seokjae Lee ,  Bok-Yeon Won ,  Kyoungmin Kim ,  Donggeon Kim ,  Myeongsik Ryu ,  Sangwook Park ,  Inseok Baek

    IPC分类号： G11C11/408 ,  H01L27/108

    摘要： A sub-word-line driver and semiconductor memory devices including the same are provided. The sub-word-line driver may include a word line pull-up transistor, a word line pull-down transistor, and a keeping transistor configured to maintain a word line at a specified voltage level. The sub-word-line driver may include a peripheral active region on a substrate, a first peripheral gate electrode that corresponds to a gate node of the word line pull-down transistor on the peripheral active region, a second peripheral gate electrode that corresponds to a gate node of the keeping transistor on the peripheral active region, and a first lower contact coupled to a first region of the peripheral active region. A first (VBB) voltage from the first region may be supplied to a source node of the keeping transistor.