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    Apparatus and method of operating memory device
    1.
    发明授权
    Apparatus and method of operating memory device 有权
    操作存储器件的装置和方法

    公开(公告)号：US09147483B2

    公开(公告)日：2015-09-29

    申请号：US14068122

    申请日：2013-10-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Jun Yoon ,  Jae-Yong Jeong ,  Myoung-Hoon Choi ,  Bo-Geun Kim ,  Ki-Tae Park

    IPC: G11C16/26 ,  G06F11/10 ,  G11C11/56 ,  G11C16/34 ,  G11C29/04

    CPC classification number: G11C16/26 ,  G06F11/1048 ,  G11C11/5642 ,  G11C16/3422 ,  G11C2029/0411 ,  G11C2211/5641

    Abstract: A memory device useable with a memory system includes a voltage generator to a plurality of first candidate voltages and a plurality of second candidate voltages, and an X decoder to sequentially apply each of the plurality of first candidate voltages and each of the plurality of second candidate voltages to one or more cells of a memory cell array, and then to apply one of the plurality of first candidate voltages and one of the plurality of second candidate voltages as a first read voltage and a second voltage, respectively, to read data from the cells of the memory cell array according to a characteristic of the cells of the memory cell array.

    Abstract translation: 可与存储器系统一起使用的存储装置包括电压发生器到多个第一候选电压和多个第二候选电压，以及X解码器，以顺序地施加多个第一候选电压中的每一个，并且多个第二候选 电压到存储单元阵列的一个或多个单元，然后分别施加多个第一候选电压和多个第二候选电压中的一个作为第一读取电压和第二电压以从 根据存储单元阵列的单元的特性，存储单元阵列的单元。

    Method of programming a nonvolatile memory device and nonvolatile memory device performing the method
    3.
    发明授权
    Method of programming a nonvolatile memory device and nonvolatile memory device performing the method 有权
    执行该方法的非易失性存储器件和非易失性存储器件的编程方法

    公开(公告)号：US08854879B2

    公开(公告)日：2014-10-07

    申请号：US13755448

    申请日：2013-01-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dong-Kyo Shim ,  Min-Seok Kim ,  Tae-Young Kim ,  Ki-Tae Park ,  Jae-Yong Jeong

    IPC: G11C16/04 ,  G11C11/56 ,  G11C16/10 ,  G11C16/34

    CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/3418

    Abstract: A method of programming a nonvolatile memory device including multi-level cells that store multi-bit data, includes performing a pre-programming operation that programs at least some of the multi-level cells to a plurality of intermediate states which are different from an erased state, and performing a main programming operation that programs the multi-level cells to a plurality of target states corresponding to the multi-bit data. At least some of the intermediate program states have threshold voltage distributions that partially overlap each other.

    Abstract translation: 一种编程包括存储多位数据的多电平单元的非易失性存储器件的方法包括执行将至少一些多电平单元编程为与被擦除的多个等级单元不同的多个中间状态的预编程操作 状态，并且执行将多电平单元编程为对应于多位数据的多个目标状态的主编程操作。 至少一些中间程序状态具有部分彼此重叠的阈值电压分布。

    Programming method for non-volatile memory device
    5.
    再颁专利
    Programming method for non-volatile memory device 有权

    公开(公告)号：USRE46665E1

    公开(公告)日：2018-01-09

    申请号：US14945350

    申请日：2015-11-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ki-Tae Park ,  Yeong-taek Lee

    IPC: G11C11/34 ,  G11C16/34

    CPC classification number: G11C16/3418

    Abstract: Provided is a method of programming a non-volatile memory device. The method includes applying a first programming pulse to a corresponding wordline of the non-volatile memory device, applying a second programming pulse to the wordline, wherein a voltage of the second programming pulse is different from that of the first programming pulse, and applying voltages to each bitline connected to the wordline, the voltages applied to each of the bitlines are different from each other according to a plurality of bit values to be programmed to corresponding memory cells in response to the first programming pulse or the second programming pulse.

    MEMORY DIAGNOSIS SYSTEM
    7.
    发明申请
    MEMORY DIAGNOSIS SYSTEM 有权

    公开(公告)号：US20170249227A1

    公开(公告)日：2017-08-31

    申请号：US15403497

    申请日：2017-01-11

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： KYUNG-RYUN KIM ,  Ki-Tae Park

    IPC: G06F11/32 ,  G06F11/30 ,  G06F11/07

    CPC classification number: G06F1/20 ,  G06F11/073 ,  G06F11/3037 ,  G06F11/3051 ,  G06F11/321 ,  G06F12/16

    Abstract: A memory diagnosis system includes a memory device and a server. The memory device includes a memory module configured to adjust operational parameters in response to a parameter control signal, a memory controller configured to generate the parameter control signal in response to a feedback signal, and a memory state monitor configured to monitor the memory module to generate an information signal that includes information on a state of the memory module. The server is configured to generate the feedback signal in response to the information signal.

    Non-volatile memory device and related method of operation
    9.
    发明授权
    Non-volatile memory device and related method of operation 有权
    非易失性存储器件及相关操作方法

    公开(公告)号：US09305657B2

    公开(公告)日：2016-04-05

    申请号：US14522753

    申请日：2014-10-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myung-Hoon Choi ,  Jae-Woo Im ,  Ki-Tae Park

    IPC: G11C16/04 ,  G11C16/26 ,  G11C16/10 ,  G11C16/16

    CPC classification number: G11C16/14 ,  G11C16/10 ,  G11C16/16 ,  G11C16/26 ,  G11C16/3459

    Abstract: A non-volatile memory device receives a start command through a command line, receives an address through an address line, receives at least one setting value through the address line, receives a confirm command corresponding to the start command through the command line, sets at least one parameter of the non-volatile memory device as the setting value based on the start command, a number of the setting value, and the confirm command, and executes an operation that corresponds to the start command, on a memory cell that corresponds to the address, based on the set parameter.

    Abstract translation: 非易失性存储装置通过命令行接收开始命令，通过地址线接收地址，通过地址线接收至少一个设定值，通过命令行接收与开始命令对应的确认命令，设定为 基于开始命令，设定值的数量和确认命令作为设定值的非易失性存储器件的至少一个参数，并且对应于开始命令的存储单元执行对应于开始命令的操作 该地址，基于设置的参数。

    Method of operating memory device
    10.
    发明授权
    Method of operating memory device 有权
    操作存储设备的方法

    公开(公告)号：US09177660B2

    公开(公告)日：2015-11-03

    申请号：US14069588

    申请日：2013-11-01

    Applicant: Samsung Electronics Co., Ltd

    Inventor： Hyun-Jun Yoon ,  Jae-Yong Jeong ,  Myung-Hoon Choi ,  Bo-Geun Kim ,  Ki-Tae Park

    IPC: G06F11/10 ,  G11C16/26 ,  G11C16/04 ,  G11C29/00

    CPC classification number: G11C16/26 ,  G06F11/1048 ,  G06F11/1072 ,  G11C16/0483 ,  G11C29/00

    Abstract: A method of operating a memory device includes changing a first read voltage, which determines a first voltage state or a second voltage state, to a voltage within a first range and determining the voltage as a first select read voltage, and changing a second read voltage, which is used to determine whether the data stored in the memory cells is a third different voltage state or a fourth different voltage state, to a voltage within a second different range and determining the voltage as a second select read voltage. The first voltage state overlaps the second voltage. The third voltage state overlaps the fourth voltage state. A difference between a voltage at an intersection of the third and fourth voltage states and the second read voltage is greater than a difference between a voltage at an intersection of the first and second voltage states and the first read voltage.

    Abstract translation: 一种操作存储器件的方法包括将确定第一电压状态或第二电压状态的第一读取电压改变为第一范围内的电压并将电压确定为第一选择读取电压，并且改变第二读取电压 ，其用于确定存储在存储单元中的数据是否是第三不同电压状态或第四不同电压状态，以及第二不同范围内的电压，并将电压确定为第二选择读取电压。 第一电压状态与第二电压重叠。 第三电压状态与第四电压状态重叠。 第三和第四电压状态的交点处的电压与第二读取电压之间的差异大于第一和第二电压状态与第一读取电压的交点处的电压之间的差。

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