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公开(公告)号：US20190288203A1
公开(公告)日：2019-09-19
申请号：US16149507
申请日：2018-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho JUNG , KYOUNG SUN KIM , JEONGHEE PARK , JIHO PARK , Changyup PARK
Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.
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2.发明申请APPARATUS AND ARRANGEMENTS OF MAGNETIC FIELD GENERATORS TO FACILITATE PHYSICAL VAPOR DEPOSITION TO FORM SEMICONDUCTOR FILMS 有权磁场发生器的装置和装置，以便将物理蒸气沉积形成半导体膜公开(公告)号：US20140265857A1
公开(公告)日：2014-09-18
申请号：US13840057
申请日：2013-03-15
Applicant: Semicat, Inc. , Samsung Electronics Co., Ltd.
Inventor： JEONGHEE PARK , Jae Yeol PARK
CPC classification number: H05H1/16 , H01F7/0278 , H01J37/34 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J37/3461
Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to an apparatus and arrangements of magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a magnetic field generator apparatus can include a rotatable magnetic field and a counterbalance magnetic field generator that rotates about the axis of rotation in opposition to the rotatable magnetic field generator. The rotatable magnetic field generator generates a first magnitude of a magnetic field adjacent to a first circumferential portion of a circular region. The counterbalance magnetic field generator generates a second magnitude of the magnetic field adjacent to a second circumferential portion. The rotatable and counterbalance magnetic field generators can be configured to generate the magnetic field between the first and a second plane along a diameter extending from the first circumferential portion to the second circumferential portion.
Abstract translation: 实施例一般涉及半导体器件制造和工艺，更具体地，涉及被配置为产生旋转磁场以促进物理气相沉积（“PVD”）的磁场发生器的装置和布置。 在一个实施例中，磁场发生器装置可以包括可旋转磁场和平衡磁场发生器，其围绕与旋转磁场发生器相对的旋转轴线旋转。 可旋转磁场发生器产生与圆形区域的第一圆周部分相邻的第一磁场强度。 平衡磁场发生器产生与第二圆周部分相邻的第二磁场强度。 可旋转和平衡磁场发生器可以被配置为沿着从第一周向部分延伸到第二周向部分的直径在第一和第二平面之间产生磁场。
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公开(公告)号：US20210013410A1
公开(公告)日：2021-01-14
申请号：US17033460
申请日：2020-09-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho JUNG , KYOUNG SUN KIM , JEONGHEE PARK , JIHO PARK , Changyup PARK
Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.
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4.发明申请公开(公告)号：US20190287771A1
公开(公告)日：2019-09-19
申请号：US16127452
申请日：2018-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： JIHO PARK , JEONGHEE PARK , Changyup PARK
Abstract: Disclosed are a collimator, a fabrication apparatus including the same, and a method of fabricating a semiconductor device using the same. The fabrication apparatus may include a chamber, a heater chuck provided in a lower region of the chamber and configured to heat a substrate, a target provided over the heater chuck, the target containing a source for a thin layer to be deposited on the substrate, a plasma electrode provided in an upper region of the chamber and configured to generate plasma near the target and thereby to produce particles from the source, and a collimator provided between the heater chuck and the target.
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公开(公告)号：US20210104669A1
公开(公告)日：2021-04-08
申请号：US16909218
申请日：2020-06-23
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JIHO PARK , KWANGMIN PARK , JEONGHEE PARK , CHANGYUP PARK , SUKHWAN CHUNG
IPC: H01L45/00
Abstract: A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.
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Patent Agency Ranking
6.发明申请PHYSICAL VAPOR DEPOSITION METHODS AND SYSTEMS TO FORM SEMICONDUCTOR FILMS USING COUNTERBALANCE MAGNETIC FIELD GENERATORS 审中-公开物理蒸发沉积方法和系统使用平衡磁场发生器形成半导体膜公开(公告)号：US20140262754A1
公开(公告)日：2014-09-18
申请号：US13840469
申请日：2013-03-15
Applicant: SEMICAT, INC. , Samsung Electronics Co., Ltd.
Inventor： JEONGHEE PARK , Jae Yeol PARK
CPC classification number: H01L21/02266 , C23C14/0623 , C23C14/3407 , C23C14/35 , H01J37/32669 , H01J37/3405 , H01J37/345 , H01J37/3452 , H01J37/3455 , H01J2237/332 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1625
Abstract: Embodiments relate generally to semiconductor device fabrication and processes, and more particularly, to systems and methods that implement magnetic field generators configured to generate rotating magnetic fields to facilitate physical vapor deposition (“PVD”). In one embodiment, a system generates a first portion of a magnetic field adjacent a first circumferential portion of a substrate, and can generate a second portion of the magnetic field adjacent to a second circumferential portion of the substrate. The second circumferential portion is disposed at an endpoint of a diameter that passes through an axis of rotation to another endpoint of the diameter at which the first circumferential portion resides. The second peak magnitude can be less than the first peak magnitude. The system rotates the first and second portions of the magnetic fields to decompose a target material to form a plasma adjacent the substrate. The system forms a film upon the substrate
Abstract translation: 实施例通常涉及半导体器件制造和工艺，更具体地，涉及实现磁场发生器的系统和方法，其被配置为产生旋转磁场以促进物理气相沉积（“PVD”）。 在一个实施例中，系统产生与衬底的第一周向部分相邻的磁场的第一部分，并且可以产生与衬底的第二圆周部分相邻的磁场的第二部分。 第二圆周部分设置在通过旋转轴线的直径的端点处，到达第一圆周部分所在直径的另一端点。 第二峰值可以小于第一峰值。 该系统使磁场的第一和第二部分旋转以分解目标材料以在基片附近形成等离子体。 该系统在基底上形成膜
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7.发明申请公开(公告)号：US20200075850A1
公开(公告)日：2020-03-05
申请号：US16459637
申请日：2019-07-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： JEONGHEE PARK , JIHO PARK , CHANGYUP PARK , DONGHO AHN
Abstract: A variable resistance memory device may include insulating layers stacked on a substrate, a first conductive line penetrating the insulating layers, switching patterns between the insulating layers, a phase change pattern between the first conductive line and each of the switching patterns, and a capping pattern disposed between the phase change pattern and the first conductive line and disposed in a region surrounded by the phase change pattern.
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公开(公告)号：US20200066800A1
公开(公告)日：2020-02-27
申请号：US16396650
申请日：2019-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： BYONGJU KIM , YOUNG-MIN KO , JONGUK KIM , KWANGMIN PARK , JEONGHEE PARK , DONGSUNG CHOI
Abstract: A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.
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公开(公告)号：US20190288204A1
公开(公告)日：2019-09-19
申请号：US16170108
申请日：2018-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changyup PARK , JEONGHEE PARK , Jaeho JUNG
Abstract: Disclosed is a method of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, the mold layer having a hole exposing a portion of the substrate, forming a phase transition layer with a void, in the hole, and thermally treating the phase transition layer to remove the void from the phase transition layer. The thermal treating of the phase transition layer may include heating the substrate to a first temperature to form a diffusion layer in the phase transition layer, and the first temperature may be lower than or equal to 55% of a melting point of the phase transition layer.
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公开(公告)号：US20140024195A1
公开(公告)日：2014-01-23
申请号：US14032997
申请日：2013-09-20
Applicant: SAMSUNG ELECTRONICS CO., LTD
Inventor： JEONGHEE PARK , HIDEKI HORII , HYEYOUNG PARK , JIN HO OH , HYUN-SUK KWON
IPC: H01L45/00
CPC classification number: H01L45/16 , H01L27/2463 , H01L45/06 , H01L45/1233 , H01L45/124 , H01L45/1293 , H01L45/141 , H01L45/1683
Abstract: Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.
Abstract translation: 提供了一种可变电阻存储器件及其形成方法。 可变电阻存储器件可以包括衬底，在衬底上的多个底部电极，以及包括形成在其中的沟槽的第一层间绝缘层。 沟槽露出底部电极并沿第一方向延伸。 可变电阻存储器件还包括设置在第一层间绝缘层上并沿与第一方向交叉的第二方向延伸的顶电极和设置在沟槽中并具有与顶电极的侧壁对准的侧壁的多个可变电阻图案。
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