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公开(公告)号：US20210151506A1
公开(公告)日：2021-05-20
申请号：US17032571
申请日：2020-09-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jonguk KIM , Dongsung CHOI , Kwangmin PARK , Jaeho JUNG
Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device including a first conductive line on a substrate, memory cell structures stacked on the first conductive line, a second conductive line between the memory cell structures; and a third conductive line on the memory cell structures may be provided. Each of the plurality of memory cell structures includes a data storage material pattern, a switching material pattern, and a plurality of electrode patterns, at least one of the electrode patterns includes at least one of carbon material layer or a carbon-containing material layer, and the at least one of the electrode patterns includes a first region doped with a nitrogen and a second region that is not doped with the nitrogen, or is doped with the nitrogen at a first concentration lower than a second concentration of the nitrogen in the first region.
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公开(公告)号：US20190288204A1
公开(公告)日：2019-09-19
申请号：US16170108
申请日：2018-10-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Changyup PARK , JEONGHEE PARK , Jaeho JUNG
Abstract: Disclosed is a method of fabricating a semiconductor device. The method may include forming a mold layer on a substrate, the mold layer having a hole exposing a portion of the substrate, forming a phase transition layer with a void, in the hole, and thermally treating the phase transition layer to remove the void from the phase transition layer. The thermal treating of the phase transition layer may include heating the substrate to a first temperature to form a diffusion layer in the phase transition layer, and the first temperature may be lower than or equal to 55% of a melting point of the phase transition layer.
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公开(公告)号：US20210013410A1
公开(公告)日：2021-01-14
申请号：US17033460
申请日：2020-09-25
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho JUNG , KYOUNG SUN KIM , JEONGHEE PARK , JIHO PARK , Changyup PARK
Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.
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公开(公告)号：US20210050522A1
公开(公告)日：2021-02-18
申请号：US16746258
申请日：2020-01-17
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaeho JUNG , Youngmin KO , Jonguk KIM , Kwangmin PARK , Dongsung CHOI
Abstract: A method of fabricating a memory device includes forming word lines and cell stacks with gaps between the cell stacks, forming a lower gap-fill insulator in the gaps, forming an upper gap-fill insulator on the lower gap-fill insulator, curing the lower gap-fill insulator and the upper gap-fill insulator to form a gap-fill insulator, and forming bit lines on the cell stacks and the gap-fill insulator. The lower gap-fill process may be performed using a first source gas that includes first and second precursors, and the upper gap-fill process may be performed using a second source gas that includes the first and second precursors, a volume ratio of the first precursor to the second precursor in the first source gas may be greater than 15:1, and a volume ratio of the first precursor to the second precursor in the second source gas may be less than 15:1.
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公开(公告)号：US20190197673A1
公开(公告)日：2019-06-27
申请号：US16232711
申请日：2018-12-26
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaeho JUNG , Yeultak SUNG
CPC classification number: G06T5/50 , G06T7/248 , G06T2207/20084
Abstract: Provided is an artificial intelligence (AI) system that mimics functions, such as recognition and determination by human brains, by utilizing a machine learning algorithm, such as deep learning, and applications of the AI system. An image acquisition device is disclosed including a camera configured to acquire a first image, wherein a portion of a main object is hidden from the camera by a sub-object; at least one processor configured to input the first image to a first AI neural network; detect, by the first AI neural network from data corresponding to a plurality of objects included in the first image, first data corresponding to the main object and second data corresponding to the sub-object from the first image by inputting the first image to an AI neural network, remove the sub-object from the first image, and generate, using a second AI neural network, a second image by restoring third data corresponding to at least a portion of the main object hidden by the removed sub-object by using the AI neural network, wherein the third data replaces the second data; and a display configured to display at least one of the first image and the second image.
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Patent Agency Ranking
公开(公告)号：US20150061545A1
公开(公告)日：2015-03-05
申请号：US14475891
申请日：2014-09-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Gyeyoung LEE , Daedong KIM , Dusan BAEK , Changhyun LEE , Jaeho JUNG , Yangwook KIM , Haein CHUN
CPC classification number: H05B37/0272 , H05B33/0854 , H05B37/0236 , H05B37/0281 , Y02B20/42
Abstract: A lighting control method and an electronic device using the same are provided. The method includes receiving pattern information for controlling lighting, generating lighting control information including brightness level information corresponding to operation time information based on the received pattern information, and transmitting the lighting control information.
Abstract translation: 提供照明控制方法和使用其的电子装置。 该方法包括接收用于控制照明的图案信息，基于接收到的图案信息生成包括与操作时间信息对应的亮度级信息的点亮控制信息，以及发送照明控制信息。
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公开(公告)号：US20240037712A1
公开(公告)日：2024-02-01
申请号：US18484979
申请日：2023-10-11
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaeho JUNG , Yeultak SUNG
CPC classification number: G06T5/50 , G06T7/248 , G06T5/005 , G06T2207/20084 , G06T2207/20081 , G06T2207/20221
Abstract: Provided is an artificial intelligence (AI) system that mimics functions, such as recognition and determination by human brains, by utilizing a machine learning algorithm, such as deep learning, and applications of the AI system. An image acquisition device is disclosed including a camera configured to acquire a first image, wherein a portion of a main object is hidden from the camera by a sub-object; at least one processor configured to input the first image to a first AI neural network; detect, by the first AI neural network from data corresponding to a plurality of objects included in the first image, first data corresponding to the main object and second data corresponding to the sub-object from the first image by inputting the first image to an AI neural network, remove the sub-object from the first image, and generate, using a second AI neural network, a second image by restoring third data corresponding to at least a portion of the main object hidden by the removed sub-object by using the AI neural network, wherein the third data replaces the second data; and a display configured to display at least one of the first image and the second image.
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公开(公告)号：US20220245779A1
公开(公告)日：2022-08-04
申请号：US17728535
申请日：2022-04-25
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Jaeho JUNG , Yeultak SUNG
Abstract: Provided is an artificial intelligence (AI) system that mimics functions, such as recognition and determination by human brains, by utilizing a machine learning algorithm, such as deep learning, and applications of the AI system. An image acquisition device is disclosed including a camera configured to acquire a first image, wherein a portion of a main object is hidden from the camera by a sub-object; at least one processor configured to input the first image to a first AI neural network; detect, by the first AI neural network from data corresponding to a plurality of objects included in the first image, first data corresponding to the main object and second data corresponding to the sub-object from the first image by inputting the first image to an AI neural network, remove the sub-object from the first image, and generate, using a second AI neural network, a second image by restoring third data corresponding to at least a portion of the main object hidden by the removed sub-object by using the AI neural network, wherein the third data replaces the second data; and a display configured to display at least one of the first image and the second image.
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公开(公告)号：US20200066978A1
公开(公告)日：2020-02-27
申请号：US16423557
申请日：2019-05-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Pyojin JEON , Jaeho JUNG , Gwang-Hyun BAEK
IPC: H01L45/00
Abstract: A variable resistance memory device includes an interlayer insulating structure on a substrate, the interlayer insulating structure having a hole, a bottom electrode in a lower portion of the hole, and a pattern in an upper portion of the hole, the pattern including at least one of a phase change pattern or an intermediate electrode, a sidewall of the pattern defining an angle with a top surface of the substrate, and the angle decreasing as a vertical distance from the substrate increases.
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公开(公告)号：US20190288203A1
公开(公告)日：2019-09-19
申请号：US16149507
申请日：2018-10-02
Applicant: Samsung Electronics Co., Ltd.
Inventor： Jaeho JUNG , KYOUNG SUN KIM , JEONGHEE PARK , JIHO PARK , Changyup PARK
Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.
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