公开(公告)号：US20190288203A1

公开(公告)日：2019-09-19

申请号：US16149507

申请日：2018-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho JUNG ,  KYOUNG SUN KIM ,  JEONGHEE PARK ,  JIHO PARK ,  Changyup PARK

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

公开(公告)号：US20210013410A1

公开(公告)日：2021-01-14

申请号：US17033460

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho JUNG ,  KYOUNG SUN KIM ,  JEONGHEE PARK ,  JIHO PARK ,  Changyup PARK

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.