公开(公告)号：US20190288203A1

公开(公告)日：2019-09-19

申请号：US16149507

申请日：2018-10-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho JUNG ,  KYOUNG SUN KIM ,  JEONGHEE PARK ,  JIHO PARK ,  Changyup PARK

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

公开(公告)号：US20210104669A1

公开(公告)日：2021-04-08

申请号：US16909218

申请日：2020-06-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JIHO PARK ,  KWANGMIN PARK ,  JEONGHEE PARK ,  CHANGYUP PARK ,  SUKHWAN CHUNG

IPC: H01L45/00

Abstract: A method of fabricating a variable resistance memory device includes: forming a bottom electrode on a substrate; forming a dielectric layer on the substrate, wherein the dielectric layer has a first trench that exposes the bottom electrode; forming a variable resistance layer in the first trench; and irradiating the variable resistance layer with a laser, wherein the variable resistance layer is irradiated by the laser for a time of about 1.8 μs to about 54 μs.

公开(公告)号：US20200075850A1

公开(公告)日：2020-03-05

申请号：US16459637

申请日：2019-07-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： JEONGHEE PARK ,  JIHO PARK ,  CHANGYUP PARK ,  DONGHO AHN

IPC: H01L45/00 ,  H01L27/24

Abstract: A variable resistance memory device may include insulating layers stacked on a substrate, a first conductive line penetrating the insulating layers, switching patterns between the insulating layers, a phase change pattern between the first conductive line and each of the switching patterns, and a capping pattern disposed between the phase change pattern and the first conductive line and disposed in a region surrounded by the phase change pattern.

公开(公告)号：US20210013410A1

公开(公告)日：2021-01-14

申请号：US17033460

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho JUNG ,  KYOUNG SUN KIM ,  JEONGHEE PARK ,  JIHO PARK ,  Changyup PARK

IPC: H01L45/00 ,  H01J37/32 ,  H01J37/34

Abstract: An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

公开(公告)号：US20190287771A1

公开(公告)日：2019-09-19

申请号：US16127452

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： JIHO PARK ,  JEONGHEE PARK ,  Changyup PARK

IPC: H01J37/34 ,  H01J37/32 ,  H01L27/24 ,  H01L45/00

Abstract: Disclosed are a collimator, a fabrication apparatus including the same, and a method of fabricating a semiconductor device using the same. The fabrication apparatus may include a chamber, a heater chuck provided in a lower region of the chamber and configured to heat a substrate, a target provided over the heater chuck, the target containing a source for a thin layer to be deposited on the substrate, a plasma electrode provided in an upper region of the chamber and configured to generate plasma near the target and thereby to produce particles from the source, and a collimator provided between the heater chuck and the target.