公开(公告)号：US20240081075A1

公开(公告)日：2024-03-07

申请号：US18131924

申请日：2023-04-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byongju KIM ,  Dongsung CHOI ,  Wonjun PARK ,  Donghwa LEE ,  Jaemin JUNG ,  Changheon CHEON

IPC: H10B43/40 ,  H01L23/528 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

CPC classification number: H10B43/40 ,  H01L23/5283 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

Abstract: A method of manufacturing a semiconductor device is provided including the operations of forming a peripheral circuit structure including a substrate, circuit elements on the substrate, and interconnections on the circuit elements. The method includes forming a plate layer on the peripheral circuit structure, forming a preliminary stack structure by alternately stacking sacrificial layers and interlayer insulating layers on the plate layer in a first direction perpendicular to an upper surface of the plate layer, and patterning the stack structure to form a stepped structure to form patterned sacrificial layers and patterned interlayer insulating layers. The method includes forming deposition inhibition layers on exposed surfaces of the patterned interlayer insulating layers, forming selective deposition layers on exposed surfaces of the patterned sacrificial layers, forming channel structures penetrating through the preliminary stack structure in the first direction, and contacting the plate layer.

公开(公告)号：US20240090220A1

公开(公告)日：2024-03-14

申请号：US18367619

申请日：2023-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaemin JUNG ,  Byongju KIM ,  Wonjun PARK ,  Donghwa LEE ,  Changheon CHEON ,  Dongsung CHOI

IPC: H10B43/27 ,  G11C5/06 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00

CPC classification number: H10B43/27 ,  G11C5/063 ,  G11C16/0483 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/10 ,  H10B43/35 ,  H10B43/40 ,  H10B80/00 ,  H01L2225/06506

Abstract: A semiconductor device includes a plurality of gate electrodes spaced apart from each other in a vertical direction on a substrate, a plurality of channel structures respectively penetrating a plurality of gate electrodes and extending in the vertical direction, each comprising a channel layer having a stacked structure of a first oxide semiconductor channel layer and a second oxide semiconductor channel layer which have different conductivities, and a gate insulating layer disposed between the channel layer and each of the plurality of gate electrodes, and a plurality of bit lines disposed on the plurality of channel structures and respectively connected to the plurality of channel structures, and the gate insulating layer, the first oxide semiconductor channel layer, and the second oxide semiconductor channel layer are sequentially disposed.

公开(公告)号：US20210050522A1

公开(公告)日：2021-02-18

申请号：US16746258

申请日：2020-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jaeho JUNG ,  Youngmin KO ,  Jonguk KIM ,  Kwangmin PARK ,  Dongsung CHOI

IPC: H01L45/00 ,  H01L27/24

Abstract: A method of fabricating a memory device includes forming word lines and cell stacks with gaps between the cell stacks, forming a lower gap-fill insulator in the gaps, forming an upper gap-fill insulator on the lower gap-fill insulator, curing the lower gap-fill insulator and the upper gap-fill insulator to form a gap-fill insulator, and forming bit lines on the cell stacks and the gap-fill insulator. The lower gap-fill process may be performed using a first source gas that includes first and second precursors, and the upper gap-fill process may be performed using a second source gas that includes the first and second precursors, a volume ratio of the first precursor to the second precursor in the first source gas may be greater than 15:1, and a volume ratio of the first precursor to the second precursor in the second source gas may be less than 15:1.

公开(公告)号：US20240196618A1

公开(公告)日：2024-06-13

申请号：US18528970

申请日：2023-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byongju KIM ,  Dongsung CHOI ,  Wonjun PARK ,  Donghwa LEE ,  Jaemin JUNG ,  Changheon CHEON

IPC: H10B43/27 ,  H10B41/27 ,  H10B51/20

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B51/20 ,  G11C16/14

Abstract: An integrated circuit device includes a semiconductor substrate; a plurality of conductive lines extending on the semiconductor substrate in a horizontal direction and overlapping each other in a vertical direction; a plurality of insulating layers between pairs of conductive lines of the plurality of conductive lines and extending in the horizontal direction; and a channel structure passing through the plurality of conductive lines and the plurality of insulating layers, wherein the channel structure includes a core insulating layer, a channel layer on a side wall and a bottom surface of the core insulating layer, a gate insulating layer on an outer wall of the channel layer, and a ferroelectric layer on an outer wall of the gate insulating layer.

公开(公告)号：US20210151506A1

公开(公告)日：2021-05-20

申请号：US17032571

申请日：2020-09-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jonguk KIM ,  Dongsung CHOI ,  Kwangmin PARK ,  Jaeho JUNG

IPC: H01L27/24 ,  H01L45/00

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device including a first conductive line on a substrate, memory cell structures stacked on the first conductive line, a second conductive line between the memory cell structures; and a third conductive line on the memory cell structures may be provided. Each of the plurality of memory cell structures includes a data storage material pattern, a switching material pattern, and a plurality of electrode patterns, at least one of the electrode patterns includes at least one of carbon material layer or a carbon-containing material layer, and the at least one of the electrode patterns includes a first region doped with a nitrogen and a second region that is not doped with the nitrogen, or is doped with the nitrogen at a first concentration lower than a second concentration of the nitrogen in the first region.

公开(公告)号：US20240373635A1

公开(公告)日：2024-11-07

申请号：US18587785

申请日：2024-02-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dongsung CHOI ,  Byongju KIM ,  Hyungjoon KIM

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35

Abstract: A semiconductor device includes a plate layer, gate electrodes on the plate layer, interlayer insulating layers that are alternately stacked with the gate electrodes, and channel structure that extends into the gate electrodes, where the channel structure includes a channel filling layer, a channel layer that at least partially surrounds the channel filling layer, charge storage layers between the gate electrodes and the channel layer, a first dielectric layer between the gate electrodes and the charge storage layers, and a second dielectric layer between the channel layer and the charge storage layers, where the channel layer includes first convex portions that extend toward the channel filling layer from a side surface of the channel layer that contacts the channel filling layer, and where vertices of the first convex portions are at first levels in the first direction that are between each level of a pair of adjacent gate electrodes.

公开(公告)号：US20240244846A1

公开(公告)日：2024-07-18

申请号：US18236637

申请日：2023-08-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonjun PARK ,  Byongju KIM ,  Jaemin JUNG ,  Kwangmin PARK ,  Donghwa LEE ,  Dongsung CHOI

IPC: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/27 ,  H10B43/40

CPC classification number: H10B43/35 ,  H10B41/27 ,  H10B41/35 ,  H10B41/40 ,  H10B43/27 ,  H10B43/40

Abstract: A semiconductor device includes a substrate; a stack structure including an interlayer insulating layer and a gate electrode which are alternately stacked on the substrate; a channel layer extending in a direction crossing the substrate through the stack structure; and a gate dielectric layer between the gate electrode and the channel layer, the gate dielectric layer including a tunneling layer, a charge storage layer, and a blocking layer sequentially on the channel layer, wherein the tunneling layer includes a carbon-containing layer including carbon, and the tunneling layer is positioned closer to the channel layer than it is to the charge storage layer.

公开(公告)号：US20230123932A1

公开(公告)日：2023-04-20

申请号：US17959365

申请日：2022-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eunyeoung CHOI ,  Joonam KIM ,  Hyungjoon KIM ,  Donghwa LEE ,  Dongsung CHOI

IPC: H01L27/11556

Abstract: A method of manufacturing a semiconductor device includes forming a molded structure of stacked and alternating interlayer insulating layers and sacrificial layers on a lower structure, forming a hole through the molded structure, forming recess regions in the sacrificial layers of the molded structure, respectively, by removing a portion of the sacrificial layers, exposed through the hole, from side surfaces of the sacrificial layers, sequentially forming a preliminary blocking pattern and a charge storage pattern in each of the recess regions, sequentially forming a tunneling layer and a channel layer in the hole, forming trenches penetrating through the molded structure, such that the trenches extend in a line shape, removing the sacrificial layers exposed by the trenches, such that the preliminary blocking pattern is exposed, and oxidizing the preliminary blocking pattern, after removing the sacrificial layers, such that a blocking pattern is formed.