公开(公告)号：US20200066800A1

公开(公告)日：2020-02-27

申请号：US16396650

申请日：2019-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： BYONGJU KIM ,  YOUNG-MIN KO ,  JONGUK KIM ,  KWANGMIN PARK ,  JEONGHEE PARK ,  DONGSUNG CHOI

IPC: H01L27/24 ,  H01L45/00

Abstract: A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.