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公开(公告)号：US20220013722A1
公开(公告)日：2022-01-13
申请号：US17204599
申请日：2021-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor： JAEHO JUNG , KWANGMIN PARK , JONGUK KIM , DONGSUNG CHOI
Abstract: A variable resistance memory device includes first conductive lines extending in a first direction, second conductive lines extending in a second direction and crossing the first conductive lines in a plan view, and cell structures respectively provided at crossing points of the first conductive lines and the second conductive lines in the plan view. Each of the cell structures includes a switching pattern, a variable resistance pattern, and a first electrode provided between the switching pattern and the first conductive line, the first electrode including carbon. Each of the first conductive lines includes an upper pattern including a metal nitride in an upper portion thereof. The upper pattern is in contact with a bottom surface of the first electrode.
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公开(公告)号：US20210126194A1
公开(公告)日：2021-04-29
申请号：US16933123
申请日：2020-07-20
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： JAEHO JUNG , KWANGMIN PARK , JONGUK KIM , DONGSUNG CHOI
Abstract: A method of fabricating a variable resistance memory device that includes forming a plurality of memory cells on a substrate. Each of the plurality of memory cells in a switching device and a variable resistance pattern. A capping structure is formed that commonly covers lateral side surfaces of the plurality of memory cells. An insulating gapfill layer is formed that covers the capping structure and fills a region between adjacent memory cells of the plurality of memory cells. The forming of the capping structure includes forming a second capping layer including silicon oxide that covers the lateral side surfaces of the plurality of memory cells. At least a partial portion of the second capping layer is nitrided by performing a first decoupled plasma process to hum a third capping layer that includes silicon oxynitride.
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公开(公告)号：US20200066800A1
公开(公告)日：2020-02-27
申请号：US16396650
申请日：2019-04-27
Applicant: Samsung Electronics Co., Ltd.
Inventor： BYONGJU KIM , YOUNG-MIN KO , JONGUK KIM , KWANGMIN PARK , JEONGHEE PARK , DONGSUNG CHOI
Abstract: A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.
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