公开(公告)号：US11645199B2

公开(公告)日：2023-05-09

申请号：US16903519

申请日：2020-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi

IPC: G06F3/00 ,  G06F12/02 ,  G06F3/06

CPC classification number: G06F12/0253 ,  G06F3/061 ,  G06F3/064 ,  G06F3/0608 ,  G06F3/0652 ,  G06F3/0679 ,  G06F12/0246 ,  G06F2212/1024 ,  G06F2212/1044 ,  G06F2212/2022 ,  G06F2212/7205

Abstract: A memory controller is for controlling operations of a nonvolatile memory including a first memory block group for storing a first type of data and a second memory block group for storing a second type of data. The memory controller includes a garbage collection management unit configured to execute a garbage collection policy in which a first garbage collection criteria is applied to the first memory block group, and a second garbage collection criteria is applied to the second memory block group, where first garbage collection criteria is different than the second garbage collection criteria.

公开(公告)号：US09870160B2

公开(公告)日：2018-01-16

申请号：US14669542

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  ByungJune Song

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0655 ,  G06F3/0679 ,  G06F3/0688

Abstract: A method of operating a nonvolatile memory (NVM) is provided which includes calculating an assignment interval between successive assignments of erase blocks to free blocks from among a plurality of memory blocks of the NVM, and adjusting a number of erase blocks of the plurality of memory blocks according to the assignment interval. The erase blocks are memory blocks, having an erased state, from among the plurality of memory blocks, and the free blocks are memory blocks, which are selected to write data, from among the erase blocks.

公开(公告)号：US09734057B2

公开(公告)日：2017-08-15

申请号：US15073185

申请日：2016-03-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi

IPC: G06F3/00 ,  G06F12/06

CPC classification number: G06F12/0646 ,  G06F2212/7203

Abstract: A method of operating a semiconductor storage device is provided. A memory space of a buffer memory is allocated into a data area for storing user data and a map area for storing map data. The user data and the map data are read from a nonvolatile memory. A size of the user data to be stored in the data are compared with a size of the data area. The size of the data area and the size of the map area are adaptively varied according to the comparison result.

公开(公告)号：US09275742B2

公开(公告)日：2016-03-01

申请号：US14491156

申请日：2014-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

公开(公告)号：US09030876B2

公开(公告)日：2015-05-12

申请号：US14139175

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract translation: 公开了一种存储系统和一种编程多位闪存设备的方法，该多位闪存设备包括被配置为存储多位数据的存储器单元，其中该方法包括并且该系统被配置用于确定要存储在所选存储器单元中的数据 是一个LSB​​数据; 并且如果要存储在所选择的存储单元中的数据不是LSB数据，则将存储在所选存储单元中的较低数据备份到多位闪存器件的备份存储器块。

公开(公告)号：US09727250B2

公开(公告)日：2017-08-08

申请号：US14579386

申请日：2014-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  ByungJune Song ,  Bomi Kim

IPC: G06F3/06 ,  G11C8/08 ,  G11C16/08 ,  G11C29/02 ,  G11C29/12

CPC classification number: G06F3/061 ,  G06F3/06 ,  G06F3/0655 ,  G06F3/0688 ,  G11C8/08 ,  G11C16/08 ,  G11C29/021 ,  G11C29/025 ,  G11C29/028 ,  G11C2029/1202

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes memory blocks each having a plurality of pages and performs a read operation on the plurality of pages on the basis of read voltages. The memory controller is configured to manage page serial numbers of some of the plurality of pages according to a program elapsed time of each of the plurality of pages. When the memory controller receives a read command and a logical address from an external device, the memory controller is configured to select at least one of the managed page serial numbers, to compare the selected at least one of the page serial numbers with a page serial number of a page corresponding to the received logical address, and to control levels of the read voltages according to a comparison result.

公开(公告)号：US09460796B2

公开(公告)日：2016-10-04

申请号：US14831116

申请日：2015-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

公开(公告)号：US09424933B2

公开(公告)日：2016-08-23

申请号：US14569174

申请日：2014-12-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  Songho Yoon

IPC: G11C16/22 ,  G06F12/02 ,  G06F12/14 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G11C16/34 ,  G11C16/20 ,  G11C7/24 ,  G06F3/06

CPC classification number: G11C16/10 ,  G06F3/064 ,  G06F3/0647 ,  G06F12/02 ,  G06F12/0238 ,  G11C7/24 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/20 ,  G11C16/22 ,  G11C16/26 ,  G11C16/3459 ,  G11C2211/5641

Abstract: An operating method of a nonvolatile memory system including first and second areas is provided. Data stored in the first area is migrated to the second area when a first booting operation is performed. The data stored in the second area is reprogrammed. The first booting operation is a booting operation performed when the nonvolatile memory system is first powered on after mounted on a printed circuit board. The reprogramming is a program operation performed on the data stored in the second area without performing an erasing operation on the data stored in the second area.

Abstract translation: 提供了包括第一和第二区域的非易失性存储器系统的操作方法。 当执行第一启动操作时，存储在第一区域中的数据被迁移到第二区域。 存储在第二区域中的数据被重新编程。 第一启动操作是当非易失性存储器系统在安装在印刷电路板上之后首次通电时执行的引导操作。 重新编程是对存储在第二区域中的数据执行的程序操作，而不对存储在第二区域中的数据执行擦除操作。

公开(公告)号：US09304911B2

公开(公告)日：2016-04-05

申请号：US14056458

申请日：2013-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi

IPC: G06F3/00 ,  G06F12/06

CPC classification number: G06F12/0646

Abstract: A method of operating a semiconductor storage device is provided. A memory space of a buffer memory is allocated into a data area for storing user data and a map area for storing map data. The user data and the map data are read from a nonvolatile memory. A size of the user data to be stored in the data are compared with a size of the data area. The size of the data area and the size of the map area are adaptively varied according to the comparison result.

Abstract translation: 提供了一种操作半导体存储装置的方法。 缓冲存储器的存储空间被分配到用于存储用户数据的数据区域和用于存储地图数据的映射区域。 从非易失性存储器读取用户数据和地图数据。 要存储在数据中的用户数据的大小与数据区的大小进行比较。 根据比较结果自适应地改变数据区的大小和地图区的大小。