Invention Grant
- Patent Title: Semiconductor storage device and buffer operation method thereof
- Patent Title (中): 半导体存储装置及其缓冲操作方法
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Application No.: US14056458Application Date: 2013-10-17
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Publication No.: US09304911B2Publication Date: 2016-04-05
- Inventor: In-Hwan Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2012-0140383 20121205
- Main IPC: G06F3/00
- IPC: G06F3/00 ; G06F12/06

Abstract:
A method of operating a semiconductor storage device is provided. A memory space of a buffer memory is allocated into a data area for storing user data and a map area for storing map data. The user data and the map data are read from a nonvolatile memory. A size of the user data to be stored in the data are compared with a size of the data area. The size of the data area and the size of the map area are adaptively varied according to the comparison result.
Public/Granted literature
- US20140156964A1 SEMICONDUCTOR STORAGE DEVICE AND BUFFER OPERATION METHOD THEREOF Public/Granted day:2014-06-05
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