公开(公告)号：US09275742B2

公开(公告)日：2016-03-01

申请号：US14491156

申请日：2014-09-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

公开(公告)号：US20130173856A1

公开(公告)日：2013-07-04

申请号：US13770107

申请日：2013-02-19

Applicant: SAMSUNG ELECTRONICS CO., LTD

Inventor： Kyung-Wook Ye ,  Yul-Won Cho

IPC: G06F12/02

CPC classification number: G06F12/0246 ,  G06F2212/1016 ,  G06F2212/1036 ,  G06F2212/7207

Abstract: Provided is a data storage device including two or more data storage areas including may have two or more (heterogeneous) types of nonvolatile memory cells. At least one of the data storage areas includes a plurality of memory blocks that are sequentially selected, and metadata are stored in the currently selected memory block. The memory blocks can be sequentially used and metadata can be stored in a uniformly-distributed manner throughout the data storage device. Therefore, separate merging and wear-leveling operations are unnecessary. Thus, it is possible to improve the lifetime and writing performance of a data storage device having two or more heterogeneous nonvolatile memories.

公开(公告)号：US09030876B2

公开(公告)日：2015-05-12

申请号：US14139175

申请日：2013-12-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.

Abstract translation: 公开了一种存储系统和一种编程多位闪存设备的方法，该多位闪存设备包括被配置为存储多位数据的存储器单元，其中该方法包括并且该系统被配置用于确定要存储在所选存储器单元中的数据 是一个LSB​​数据; 并且如果要存储在所选择的存储单元中的数据不是LSB数据，则将存储在所选存储单元中的较低数据备份到多位闪存器件的备份存储器块。

公开(公告)号：US09460796B2

公开(公告)日：2016-10-04

申请号：US14831116

申请日：2015-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-Ho Jang ,  In-Hwan Choi ,  Woon-Jae Chung ,  Song-Ho Yoon ,  Kyung-Wook Ye

IPC: G11C11/34 ,  G11C16/10 ,  G11C11/56 ,  G11C16/26 ,  G06F11/10 ,  G11C29/52 ,  G06F12/02

CPC classification number: G11C16/10 ,  G06F11/1068 ,  G06F12/0246 ,  G06F2212/7208 ,  G11C11/5628 ,  G11C11/5671 ,  G11C16/26 ,  G11C29/52

Abstract: Disclosed is a memory system and a method of programming a multi-bit flash memory device which includes memory cells configured to store multi-bit data, where the method includes and the system is configured for determining whether data to be stored in a selected memory cell is an LSB data; and if data to be stored in a selected memory cell is not an LSB data, backing up lower data stored in the selected memory cell to a backup memory block of the multi-bit flash memory device.