公开(公告)号：US09870160B2

公开(公告)日：2018-01-16

申请号：US14669542

申请日：2015-03-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  ByungJune Song

IPC: G06F3/06

CPC classification number: G06F3/0619 ,  G06F3/0616 ,  G06F3/064 ,  G06F3/0652 ,  G06F3/0655 ,  G06F3/0679 ,  G06F3/0688

Abstract: A method of operating a nonvolatile memory (NVM) is provided which includes calculating an assignment interval between successive assignments of erase blocks to free blocks from among a plurality of memory blocks of the NVM, and adjusting a number of erase blocks of the plurality of memory blocks according to the assignment interval. The erase blocks are memory blocks, having an erased state, from among the plurality of memory blocks, and the free blocks are memory blocks, which are selected to write data, from among the erase blocks.

公开(公告)号：US09727250B2

公开(公告)日：2017-08-08

申请号：US14579386

申请日：2014-12-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： In-Hwan Choi ,  ByungJune Song ,  Bomi Kim

IPC: G06F3/06 ,  G11C8/08 ,  G11C16/08 ,  G11C29/02 ,  G11C29/12

CPC classification number: G06F3/061 ,  G06F3/06 ,  G06F3/0655 ,  G06F3/0688 ,  G11C8/08 ,  G11C16/08 ,  G11C29/021 ,  G11C29/025 ,  G11C29/028 ,  G11C2029/1202

Abstract: A nonvolatile memory system includes a nonvolatile memory device and a memory controller. The nonvolatile memory device includes memory blocks each having a plurality of pages and performs a read operation on the plurality of pages on the basis of read voltages. The memory controller is configured to manage page serial numbers of some of the plurality of pages according to a program elapsed time of each of the plurality of pages. When the memory controller receives a read command and a logical address from an external device, the memory controller is configured to select at least one of the managed page serial numbers, to compare the selected at least one of the page serial numbers with a page serial number of a page corresponding to the received logical address, and to control levels of the read voltages according to a comparison result.