METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
    6.
    发明申请
    METHOD OF FABRICATING A SEMICONDUCTOR DEVICE 有权
    制造半导体器件的方法

    公开(公告)号:US20160293417A1

    公开(公告)日:2016-10-06

    申请号:US14965255

    申请日:2015-12-10

    IPC分类号: H01L21/033 H01L21/027

    摘要: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

    摘要翻译: 提供一种制造半导体器件的方法。 该方法包括在下层上形成抗反射层,在抗反射层上形成光致抗蚀剂图案,分别形成保护图案以覆盖光致抗蚀剂图案,使用被保护图案覆盖的光刻胶图案蚀刻抗反射层 作为蚀刻掩模以形成抗反射图案,形成隔离物以覆盖抗反射图案的侧壁,以及去除防反射图案。

    METHOD AND APPARATUS FOR SHARING DATA QUOTA
    7.
    发明申请
    METHOD AND APPARATUS FOR SHARING DATA QUOTA 审中-公开
    方法和装置共享数据报

    公开(公告)号:US20150189043A1

    公开(公告)日:2015-07-02

    申请号:US14583089

    申请日:2014-12-24

    IPC分类号: H04L29/08

    摘要: A method of sharing a data quota in an electronic device includes grouping the electronic device and at least one other electronic device for sharing the data quota, selecting a sharing electronic device among the at least one other electronic device, through which to download data from a server, and receiving the download. Other embodiments including a server and an apparatus for sharing a data quota between electronic are also disclosed.

    摘要翻译: 在电子设备中共享数据配额的方法包括对电子设备和至少一个其他电子设备进行分组以共享数据配额,在所述至少一个其他电子设备中选择共享电子设备,通过该共享电子设备从 服务器,并接收下载。 还公开了包括用于在电子之间共享数据配额的服务器和装置的其他实施例。

    SEMICONDUCTOR DEVICE
    8.
    发明公开

    公开(公告)号:US20240222451A1

    公开(公告)日:2024-07-04

    申请号:US18243818

    申请日:2023-09-08

    摘要: A semiconductor device includes an active region extending in a first direction, a gate structure extending in a second direction, a source/drain region on the active region, a first contact structure connected to the source/drain region, and a second contact structure connected to the first contact structure. The second contact structure includes a first layer including a first grain and a second layer including second grains on the first layer. Within the first layer, a maximum vertical distance between a lowermost end of the first grain and an uppermost end of the first grain is equal to a vertical distance between a lowermost end of the first layer and an uppermost end of the first layer. A size of the first grain is greater than a size of each of the second grains. A width of the first layer is greater than a width of the first contact structure.