公开(公告)号：US10522682B2

公开(公告)日：2019-12-31

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/417 ,  H01L27/088 ,  H01L21/8238 ,  H01L27/092

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US09570304B2

公开(公告)日：2017-02-14

申请号：US14965255

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ju Park ,  Haisub Na ,  Hyojin Yun ,  Kyoungseon Kim ,  Su Min Kim ,  Hyunwoo Kim ,  Su-min Park ,  So-Ra Han

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在下层上形成抗反射层，在抗反射层上形成光致抗蚀剂图案，分别形成保护图案以覆盖光致抗蚀剂图案，使用被保护图案覆盖的光刻胶图案蚀刻抗反射层 作为蚀刻掩模以形成抗反射图案，形成隔离物以覆盖抗反射图案的侧壁，以及去除防反射图案。

公开(公告)号：US20160293417A1

公开(公告)日：2016-10-06

申请号：US14965255

申请日：2015-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ju Park ,  Haisub Na ,  Hyojin Yun ,  Kyoungseon Kim ,  Su Min Kim ,  Hyunwoo Kim ,  Su Min Park ,  So-Ra Han

IPC: H01L21/033 ,  H01L21/027

CPC classification number: H01L21/0337 ,  H01L21/0273 ,  H01L21/0276 ,  H01L21/0332 ,  H01L21/0338 ,  H01L21/31138 ,  H01L21/31144

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract translation: 提供一种制造半导体器件的方法。 该方法包括在下层上形成抗反射层，在抗反射层上形成光致抗蚀剂图案，分别形成保护图案以覆盖光致抗蚀剂图案，使用被保护图案覆盖的光刻胶图案蚀刻抗反射层 作为蚀刻掩模以形成抗反射图案，形成隔离物以覆盖抗反射图案的侧壁，以及去除防反射图案。

公开(公告)号：US11681219B2

公开(公告)日：2023-06-20

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan Kim ,  Su Min Kim ,  Ju-Young Kim ,  Jinjoo Kim ,  Hyunwoo Kim ,  Juhyeon Park ,  Hyunji Song ,  Songse Yi ,  Suk Koo Hong

IPC: G03F7/004 ,  C08L35/00 ,  C07C381/12 ,  C08L25/06

CPC classification number: G03F7/0045 ,  C07C381/12 ,  C08L25/06 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1,






in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20190043981A1

公开(公告)日：2019-02-07

申请号：US15869522

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Seop Yoon ,  Byung Ha Choi ,  Dae Geun Kim ,  Su Min Kim ,  Se Wan Park ,  Ji Ho Lee

IPC: H01L29/78 ,  H01L29/417 ,  H01L21/768 ,  H01L27/088

CPC classification number: H01L29/785 ,  H01L21/76834 ,  H01L21/823821 ,  H01L27/0886 ,  H01L27/0924 ,  H01L29/41791

Abstract: A semiconductor device is provided. The semiconductor device includes a fin type pattern, a field insulating film on a part of a sidewall of the fin-type pattern, and a gate electrode intersecting with the fin-type pattern, on the fin-type pattern and the field insulating film. The gate electrode on the field insulating film includes a first portion, a second portion, and a third portion on the field insulating film. A first width of the first portion increases as a first distance from the field insulating film, increases width of the second portion decreases as a second distance from the field insulating film increases, and a third width of the third portion increases or is substantially constant as a third distance from the field insulating film increases.

公开(公告)号：US09158204B2

公开(公告)日：2015-10-13

申请号：US13962173

申请日：2013-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon Koh ,  Su Min Kim ,  Hyunwoo Kim ,  Hyojin Yun

IPC: G03F7/42 ,  G03F7/40 ,  H01L21/02

CPC classification number: G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/426 ,  H01L21/0206

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract translation: 光刻冲洗液包括去离子水和表面活性剂，所述表面活性剂包括环胺基团和至少一个与环胺基团连接或稠合的非胺环状基团，其中所述环胺基团包括具有碳数的环 为4〜6，非胺环基包括碳数为5〜8的环。