公开(公告)号：US20230060954A1

公开(公告)日：2023-03-02

申请号：US17741753

申请日：2022-05-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyun-Ji SONG

IPC: G03F7/004 ,  C07C69/736

Abstract: A compound, a photoresist composition including the compound, and a method of manufacturing an integrated circuit device by using the photoresist composition, the compound being represented by Chemical Formula 1:

公开(公告)号：US20190064900A1

公开(公告)日：2019-02-28

申请号：US15987222

申请日：2018-05-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Kyung LEE ,  Woo-Taek SONG ,  Hyun-Ji SONG

IPC: G06F1/26

CPC classification number: G06F1/266 ,  G06F1/263

Abstract: An electronic device according to various embodiments may include a first connector including at least one first pin and at least one second pin configured to be connected to an external electronic device; a second connector comprising at least one third pin and at least one fourth pin configured to be connected to a power supply; a switching circuit; and a processor electrically connected to the first connector, the second connector, and the switching circuit, wherein the processor is configured to determine a connection with the external electronic device or a connection with the power supply, and the processor is set to cause, when connected to the external electronic device via the first connector and connected to the power supply via the second connector, power received from the power supply via the at least one third pin to be supplied to the at least one first pin using the switching circuit.

公开(公告)号：US20230142732A1

公开(公告)日：2023-05-11

申请号：US18053157

申请日：2022-11-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea KO ,  Hoon HAN ,  Byung Keun HWANG ,  Jeong Ho MUN ,  Hyun-Ji SONG ,  Youn Joung CHO

IPC: H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L21/823842 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/775 ,  H01L21/28088 ,  H01L21/823807 ,  H01L29/66439

Abstract: The present disclosure provides a method for manufacturing a semiconductor device using selective vapor deposition and selective desorption. The method for manufacturing a semiconductor device includes providing a first layer having a first surface, and forming a second layer on the first layer such that a portion of the first surface is not covered by the second layer. The second layer has a second surface that meets the first surface. An inhibitor layer is formed on the first surface and the second surface, and the inhibitor layer on the second surface is selectively removed to expose the second surface. An interest layer is formed on the second surface. Physical properties of the first layer are different from physical properties of the second layer.

公开(公告)号：US20230131429A1

公开(公告)日：2023-04-27

申请号：US17730532

申请日：2022-04-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiyup KIM ,  Hyunwoo KIM ,  Hyun-Ji SONG ,  Juyoung KIM ,  Jinjoo KIM ,  Sunghwan PARK ,  Giyoung SONG

IPC: G03F7/004 ,  C07C381/12 ,  C07C309/12 ,  H01L21/027

Abstract: A photo-decomposable compound, a photoresist composition including the photo-decomposable compound, and a method of manufacturing an integrated circuit (IC) device using the photoresist composition, the photo-decomposable compound including a phenyl sulfonium cation component; and an anion component, wherein the phenyl sulfonium cation component has a protecting group, which is decomposable by an action of acid to generate an alkali-soluble group in response to exposure, the anion component generates acid in response to exposure, the protecting group is represented by *—C(═O)OR, in which R is a substituted or unsubstituted t-butyl group or a substituted or unsubstituted C3 to C30 alicyclic group, and * is a bonding site, and the protecting group is bonded to a phenyl group of the phenyl sulfonium cation component through an ether linking group.

公开(公告)号：US20230024422A1

公开(公告)日：2023-01-26

申请号：US17746811

申请日：2022-05-17

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Hyeon PARK ,  Minsoo KIM ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: C09D133/08 ,  C09D133/16 ,  C07C309/80 ,  C07C53/18 ,  C07C53/21 ,  C07C53/23

Abstract: A resist topcoat composition includes an acrylic polymer including a structural unit containing a hydroxy group and a fluorine; a mixture including a sulfonic acid compound containing at least one fluorine and a carboxylic acid compound containing at least one fluorine in a weight ratio of about 1:0.1 to about 1:50; and a solvent. A method of forming patterns uses the resist topcoat composition to form a topcoat over a patterned substrate.

公开(公告)号：US20220252976A1

公开(公告)日：2022-08-11

申请号：US17567956

申请日：2022-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun-Ji SONG ,  Hyunwoo KIM ,  Sukkoo HONG

IPC: G03F7/004

Abstract: Photoresist compositions may include a metal structure, a radical quencher including a phenolic compound, a photobase generator, and a solvent. To manufacture an integrated circuit (IC) device, a photoresist film is formed on a lower film using the photoresist composition. A first area, which is a portion of the photoresist film, is exposed to form a metal network from the metal structure in the first area of the photoresist film, a base is generated from the photobase generator in the first area of the photoresist film, and the radical quencher is deactivated using the base in the first area of the photoresist film. The photoresist film is developed to form a photoresist pattern including the first area. The lower film is processed using the photoresist pattern.

公开(公告)号：US20250044706A1

公开(公告)日：2025-02-06

申请号：US18674355

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Young PARK ,  Daekeon KIM ,  Seungyeol BAEK ,  Giyoung SONG ,  Hyun-Ji SONG ,  Thanh Cuong NGUYEN ,  Suk Koo HONG

IPC: G03F7/00

Abstract: In a method of predicting extreme ultraviolet (EUV) dose, an entire photochemical reaction mechanism until a photoacid generator (PAG) molecule releases a proton from a PAG-cation under EUV exposure may be analyzed. A lowest unoccupied molecular orbital (LUMO) energy level may be obtained by performing a simulation for structural optimization of the PAG-cation. An additional parameter different from the LUMO energy level may be obtained by performing a simulation for structural optimization of at least one intermediate molecular structure formed by the entire photochemical reaction mechanism. A two-parameter linear regression model for predicting the EUV dose may be obtained based on the LUMO energy level and the additional parameter.

公开(公告)号：US20230282475A1

公开(公告)日：2023-09-07

申请号：US18098856

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea KO ,  Hoon HAN ,  Byung Keun HWANG ,  Jae Woon KIM ,  Jeong Ho MUN ,  Younghun SUNG ,  Hyun-Ji SONG ,  Youn Joung CHO

IPC: H01L21/02 ,  G03F7/038 ,  H01L21/311 ,  H01L21/56 ,  G03F7/16 ,  G03F7/09

CPC classification number: H01L21/02118 ,  G03F7/0387 ,  G03F7/094 ,  G03F7/168 ,  H01L21/02205 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/56

Abstract: A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.

公开(公告)号：US20230026579A1

公开(公告)日：2023-01-26

申请号：US17733743

申请日：2022-04-29

Applicant: SAMSUNG SDI CO., LTD. ,  SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ran NAMGUNG ,  Shinhyo BAE ,  Hyeon PARK ,  Daeseok SONG ,  Minki CHON ,  Jun Soo KIM ,  Hyun-Woo KIM ,  Hyun-Ji SONG ,  Young Joo CHOI ,  Suk-Koo HONG

IPC: G03F7/11 ,  C08F220/28 ,  C09D133/16 ,  H01L21/027 ,  H01L21/311

Abstract: A method of forming a photoresist pattern and a semiconductor device on which a photoresist pattern manufactured according to the same is formed. The method includes forming a photoresist pattern on a substrate; coating an organic topcoat composition including an acrylic polymer including a structural unit containing a hydroxy group and a fluorine and an acidic compound on the photoresist pattern; drying and heating the substrate on which the organic topcoat composition is coated to coat it with a topcoat; and spraying a rinse solution including an ether-based compound on the substrate coated with the topcoat to remove the topcoat.

公开(公告)号：US20230176477A1

公开(公告)日：2023-06-08

申请号：US17841031

申请日：2022-06-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sukkoo HONG ,  Moohyun KOH ,  Kyungoh KIM ,  Yechan KIM ,  Kyunghwan NOH ,  Sungan DO ,  Hyun-Ji SONG

IPC: G03F7/004 ,  G03F7/38 ,  H01L21/027

CPC classification number: G03F7/0042 ,  G03F7/38 ,  H01L21/0274

Abstract: A photoresist composition includes an organometallic compound including at least one metal-ligand bond, the organometallic compound including a metal core and at least one organic ligand bonded to the metal core, and being configured such that the at least one metal-ligand bond is not breakable by exposure to light or moisture; a photoinitiator generating an acid or a radical in response to exposure to light; and a solvent.