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公开(公告)号:US20230131429A1
公开(公告)日:2023-04-27
申请号:US17730532
申请日:2022-04-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jiyup KIM , Hyunwoo KIM , Hyun-Ji SONG , Juyoung KIM , Jinjoo KIM , Sunghwan PARK , Giyoung SONG
IPC: G03F7/004 , C07C381/12 , C07C309/12 , H01L21/027
Abstract: A photo-decomposable compound, a photoresist composition including the photo-decomposable compound, and a method of manufacturing an integrated circuit (IC) device using the photoresist composition, the photo-decomposable compound including a phenyl sulfonium cation component; and an anion component, wherein the phenyl sulfonium cation component has a protecting group, which is decomposable by an action of acid to generate an alkali-soluble group in response to exposure, the anion component generates acid in response to exposure, the protecting group is represented by *—C(═O)OR, in which R is a substituted or unsubstituted t-butyl group or a substituted or unsubstituted C3 to C30 alicyclic group, and * is a bonding site, and the protecting group is bonded to a phenyl group of the phenyl sulfonium cation component through an ether linking group.
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公开(公告)号:US20250044706A1
公开(公告)日:2025-02-06
申请号:US18674355
申请日:2024-05-24
Applicant: Samsung Electronics Co., Ltd.
Inventor: Ji Young PARK , Daekeon KIM , Seungyeol BAEK , Giyoung SONG , Hyun-Ji SONG , Thanh Cuong NGUYEN , Suk Koo HONG
IPC: G03F7/00
Abstract: In a method of predicting extreme ultraviolet (EUV) dose, an entire photochemical reaction mechanism until a photoacid generator (PAG) molecule releases a proton from a PAG-cation under EUV exposure may be analyzed. A lowest unoccupied molecular orbital (LUMO) energy level may be obtained by performing a simulation for structural optimization of the PAG-cation. An additional parameter different from the LUMO energy level may be obtained by performing a simulation for structural optimization of at least one intermediate molecular structure formed by the entire photochemical reaction mechanism. A two-parameter linear regression model for predicting the EUV dose may be obtained based on the LUMO energy level and the additional parameter.
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3.
公开(公告)号:US20240337928A1
公开(公告)日:2024-10-10
申请号:US18613810
申请日:2024-03-22
Applicant: Samsung Electronics Co., Ltd.
Inventor: Hana KIM , Haengdeog KOH , Hyeran KIM , Youngmin NAM , Giyoung SONG , Changheon LEE , Aram JEON , Jungha CHAE , Songse YI , Sukkoo HONG
IPC: G03F7/004
CPC classification number: G03F7/0045
Abstract: Provided are an organic salt represented by Formula 1 below, a photoresist composition including the same, and a method of forming a pattern by using the photoresist composition.
A description of Formula 1 is provided herein.-
4.
公开(公告)号:US20230324791A1
公开(公告)日:2023-10-12
申请号:US18313555
申请日:2023-05-08
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eunkyung LEE , Sumin KIM , Hyunwoo KIM , Juhyeon PARK , Giyoung SONG , Sukkoo HONG , Yoonhyun KWAK , Youngmin NAM , Byunghee SOHN , Sunyoung LEE , Aram JEON , Sungwon CHOI
IPC: G03F7/004 , G03F7/038 , G03F7/039 , C07C309/12 , C07D333/76 , C07C381/12
CPC classification number: G03F7/0045 , C07C309/12 , C07C381/12 , C07D333/76 , G03F7/038 , G03F7/039 , C07C2603/74
Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1:
wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.-
公开(公告)号:US20230288806A1
公开(公告)日:2023-09-14
申请号:US18098233
申请日:2023-01-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jiyup KIM , Hyunwoo KIM , Sung Hwan PARK , Juhyeon PARK , Giyoung SONG
IPC: G03F7/039 , G03F7/004 , C08F220/28 , C08F216/10 , H01L21/027
CPC classification number: G03F7/0397 , C08F216/10 , C08F220/283 , G03F7/0045 , H01L21/0274
Abstract: A photosensitive polymer includes a first repeating unit represented by Formula 1 below:
wherein, in Formula 1, R1 is a hydrogen atom or a methyl group, R2 is a substituted or unsubstituted C1 to C30 acid-labile hydrocarbylene group having a tertiary carbon atom, R3 is a C1 to C10 linear or branched alkyl group, a C3 to C30 tertiary alicyclic group, a C6 to C20 aryl group, a C2 to C20 heteroaryl group, a C7 to C20 arylalkyl group, or a C2 to C20 heteroarylalkyl group, and n is 0 or 1. To manufacture an integrated circuit (IC) device, a change in the polarity of the photosensitive polymer is induced by causing a multi-step deprotection reaction of the first repeating unit.-
6.
公开(公告)号:US20230194985A1
公开(公告)日:2023-06-22
申请号:US18076818
申请日:2022-12-07
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinjoo KIM , Sumin KIM , Hyunwoo KIM , Yechan KIM , Juyoung KIM , Jicheol PARK , Giyoung SONG , Suk Koo HONG
IPC: G03F7/039 , H01L21/027
CPC classification number: G03F7/0392 , H01L21/0276 , H01L21/0275
Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:
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公开(公告)号:US20220171284A1
公开(公告)日:2022-06-02
申请号:US17238355
申请日:2021-04-23
Applicant: Samsung Electronics Co., Ltd.
Inventor: Eunkyung LEE , Sumin KIM , Hyunwoo KIM , Juhyeon PARK , Giyoung SONG , Sukkoo HONG , Yoonhyun KWAK , Youngmin NAM , Byunghee SOHN , Sunyoung LEE , Aram JEON , Sungwon CHOI
IPC: G03F7/004 , G03F7/038 , G03F7/039 , C07C381/12 , C07C309/12 , C07D333/76
Abstract: Disclosed are a photoacid generator, a photoresist composition including the same, and a method of preparing the photoacid generator. The photoacid generator may include a compound represented by Formula 1: wherein, in Formula 1, CY, A1, A2, and B are respectively described in the specification.
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