公开(公告)号：US20230097135A1

公开(公告)日：2023-03-30

申请号：US17939153

申请日：2022-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Joo KIM ,  Ye Chan KIM ,  Ju-Young KIM ,  Ji Yup KIM ,  Hyun Woo KIM ,  Ju Hyeon PARK ,  Ji Cheol PARK ,  Hyun Ji SONG ,  Hong Gu IM ,  Suk Koo HONG

IPC: G03F7/004 ,  G03F7/039 ,  G03F7/20

Abstract: An additive for a photoresist, a photoresist composition for a EUV including the same, and a method for manufacturing a semiconductor device using the same, the additive including a copolymer that includes a first repeating unit represented by the following Chemical Formula 1-1, and a second repeating unit represented by the following Chemical Formula 2, wherein a molar ratio of the first repeating unit to the second repeating unit is 7:3 to 2:8,

公开(公告)号：US20250044706A1

公开(公告)日：2025-02-06

申请号：US18674355

申请日：2024-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Young PARK ,  Daekeon KIM ,  Seungyeol BAEK ,  Giyoung SONG ,  Hyun-Ji SONG ,  Thanh Cuong NGUYEN ,  Suk Koo HONG

IPC: G03F7/00

Abstract: In a method of predicting extreme ultraviolet (EUV) dose, an entire photochemical reaction mechanism until a photoacid generator (PAG) molecule releases a proton from a PAG-cation under EUV exposure may be analyzed. A lowest unoccupied molecular orbital (LUMO) energy level may be obtained by performing a simulation for structural optimization of the PAG-cation. An additional parameter different from the LUMO energy level may be obtained by performing a simulation for structural optimization of at least one intermediate molecular structure formed by the entire photochemical reaction mechanism. A two-parameter linear regression model for predicting the EUV dose may be obtained based on the LUMO energy level and the additional parameter.

公开(公告)号：US20210255544A1

公开(公告)日：2021-08-19

申请号：US17003414

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Suk Koo HONG ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

公开(公告)号：US20230296983A1

公开(公告)日：2023-09-21

申请号：US18154184

申请日：2023-01-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Hwan PARK ,  Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG

IPC: G03F7/039 ,  C08F212/14 ,  G03F7/038

CPC classification number: G03F7/0397 ,  C08F212/22 ,  G03F7/0382 ,  C08F2800/10

Abstract: An extreme ultraviolet (EUV) photosensitive polymer includes a first repeating unit represented by Chemical Formula 1.






(in Chemical Formula 1, R1 is a C1 to C10 alkyl group, a C1 to C10 haloalkyl group, a C6 to C18 aryl group, a haloaryl group, a C7 to C18 arylalkyl group, a C7 to C18 alkylaryl group, or a C6 to C18 haloaryl group, and R2 is a direct bond, a C1 to C10 alkylene group, a C2 to C10 alkenyl group, a C2 to C10 alkynyl group, a C6 to C18 aryl group, a C7 to C18 arylalkyl group, or a C7 to C18 alkylaryl group).

公开(公告)号：US20230194985A1

公开(公告)日：2023-06-22

申请号：US18076818

申请日：2022-12-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jinjoo KIM ,  Sumin KIM ,  Hyunwoo KIM ,  Yechan KIM ,  Juyoung KIM ,  Jicheol PARK ,  Giyoung SONG ,  Suk Koo HONG

IPC: G03F7/039 ,  H01L21/027

CPC classification number: G03F7/0392 ,  H01L21/0276 ,  H01L21/0275

Abstract: A brush polymer for a photoresist, a photoresist composition, and a method of manufacturing an integrated circuit device, the brush polymer including a core and a plurality of side polymer chains, the plurality of side polymer chains being bonded to the core and extending from the core to form a bottle-brush polymer or a star-brush polymer, together with the core, wherein each of the plurality of side polymer chains includes a first repeating unit represented by Formula 1 and a second repeating unit represented by Formula 2:

公开(公告)号：US20230357123A1

公开(公告)日：2023-11-09

申请号：US18119388

申请日：2023-03-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jonghoon KIM ,  Suk Koo HONG ,  Young Gyu KIM ,  Jooyoung SONG ,  Hae Min YANG ,  Gumhye JEON ,  Juhee KIM ,  Sunah LEE ,  Ahhyun LEE ,  Hong Won LEE

IPC: C07C205/06 ,  G03F7/038 ,  G03F7/004 ,  G03F7/029

CPC classification number: C07C205/06 ,  G03F7/0382 ,  G03F7/0048 ,  G03F7/029

Abstract: A photoresist composition, a method of forming a pattern, and a method of synthesizing 6-nitrochrysene, the photoresist composition includes a polymer resin; a photo acid generator; a quencher; an organic solvent; and an etching resistance enhancer, wherein the etching resistance enhancer is represented by the following Chemical Formula 1,

公开(公告)号：US20230123035A1

公开(公告)日：2023-04-20

申请号：US17826234

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG ,  Su Min KIM ,  Yechan KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  C08F228/02 ,  C08F220/18 ,  C08F226/02 ,  C08F220/30 ,  C08F214/18

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.

公开(公告)号：US20240069437A1

公开(公告)日：2024-02-29

申请号：US18127118

申请日：2023-03-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Suk Koo HONG ,  Moo Hyun KOH ,  Kyungoh KIM ,  Jaemyoung KIM

IPC: G03F7/004 ,  H01L21/027

CPC classification number: G03F7/0042 ,  H01L21/0274

Abstract: A resist composition and a method of manufacturing a semiconductor device, the resist composition includes an organometallic compound, the organometallic compound including a central metal and ligands combined with the central metal; and an excess ligand compound, the excess ligand compound being combinable with the central metal via a coordination bond.

公开(公告)号：US20210263411A1

公开(公告)日：2021-08-26

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/004 ,  C08L25/06 ,  C07C381/12 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20210240079A1

公开(公告)日：2021-08-05

申请号：US17003373

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon PARK ,  Su Min KIM ,  Yechan KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027 ,  H01L21/3213 ,  G03F7/20

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.