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公开(公告)号:US20240231222A1
公开(公告)日:2024-07-11
申请号:US18212913
申请日:2023-06-22
发明人: Kyungoh KIM , Sunghyun HAN , SukKoo HONG , Moo Hyun KOH , Haeng Deog KOH , Yoonhyun KWAK , Jaemyoung KIM
IPC分类号: G03F7/004 , C07F7/22 , H01L21/027
CPC分类号: G03F7/0042 , C07F7/2224 , H01L21/0275 , H01L21/0276
摘要: Provided is a photoresist composition including an organometallic compound including: a central metal; a first ligand compound; and a second ligand compound, wherein the first ligand compound bonds with the central metal, the second ligand compound does not bond with the central metal, and the first or second ligand compound includes a halogen element. The photoresist composition may improve photosensitivity while securing stability.
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公开(公告)号:US20240069437A1
公开(公告)日:2024-02-29
申请号:US18127118
申请日:2023-03-28
发明人: Suk Koo HONG , Moo Hyun KOH , Kyungoh KIM , Jaemyoung KIM
IPC分类号: G03F7/004 , H01L21/027
CPC分类号: G03F7/0042 , H01L21/0274
摘要: A resist composition and a method of manufacturing a semiconductor device, the resist composition includes an organometallic compound, the organometallic compound including a central metal and ligands combined with the central metal; and an excess ligand compound, the excess ligand compound being combinable with the central metal via a coordination bond.
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