发明公开
- 专利标题： RESIST COMPOSITION AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
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申请号： US18127118申请日： 2023-03-28
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公开(公告)号： US20240069437A1公开(公告)日： 2024-02-29
- 发明人: Suk Koo HONG , Moo Hyun KOH , Kyungoh KIM , Jaemyoung KIM
- 申请人： SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址： KR Suwon-si
- 专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人： SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址： KR Suwon-si
- 优先权： KR 20220109409 2022.08.30
- 主分类号： G03F7/004
- IPC分类号： G03F7/004 ; H01L21/027
摘要：
A resist composition and a method of manufacturing a semiconductor device, the resist composition includes an organometallic compound, the organometallic compound including a central metal and ligands combined with the central metal; and an excess ligand compound, the excess ligand compound being combinable with the central metal via a coordination bond.
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