公开(公告)号：US20160026090A1

公开(公告)日：2016-01-28

申请号：US14878034

申请日：2015-10-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chawon KOH ,  Su Min KIM ,  Hyunwoo KIM ,  Hyojin YUN

IPC: G03F7/40 ,  G03F7/20 ,  G03F7/32 ,  G03F7/16

CPC classification number: G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/426 ,  H01L21/0206

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract translation: 光刻冲洗液包括去离子水和表面活性剂，所述表面活性剂包括环胺基团和至少一个与环胺基团连接或稠合的非胺环状基团，其中所述环胺基团包括具有碳数的环 为4〜6，非胺环基包括碳数为5〜8的环。

公开(公告)号：US20230123035A1

公开(公告)日：2023-04-20

申请号：US17826234

申请日：2022-05-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Juhyeon PARK ,  Hyunwoo KIM ,  Suk Koo HONG ,  Su Min KIM ,  Yechan KIM ,  Jicheol PARK ,  Honggu IM

IPC: G03F7/039 ,  G03F7/004 ,  C08F228/02 ,  C08F220/18 ,  C08F226/02 ,  C08F220/30 ,  C08F214/18

Abstract: The present disclosure relates to a polymer for photoresist and a photoresist composition including the same. The polymer for photoresist may include a polymerization unit comprising a sensitizer, and a protection group. The polymerization unit may include a structure of chemical formula 1: wherein R1 is hydrogen, a halogen element, a methyl group, a trifluoromethyl group, a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted aryl group having 6 to 18 carbon atoms, or a substituted or unsubstituted arylalkyl group having 6 to 18 carbon atoms, and n is an integer of 1 to 100,000.

公开(公告)号：US20140045335A1

公开(公告)日：2014-02-13

申请号：US13962173

申请日：2013-08-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chawon KOH ,  Su Min KIM ,  Hyunwoo KIM ,  Hyojin YUN

IPC: G03F7/42 ,  H01L21/02

CPC classification number: G03F7/40 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32 ,  G03F7/426 ,  H01L21/0206

Abstract: A photolithographic rinse solution includes deionized water, and a surfactant, the surfactant including a cyclic amine group and at least one non-amine cyclic group joined to or fused with the cyclic amine group, wherein the cyclic amine group includes a ring having a carbon number of 4 to 6, and the non-amine cyclic group includes a ring having a carbon number of 5 to 8.

Abstract translation: 光刻冲洗液包括去离子水和表面活性剂，所述表面活性剂包括环胺基和至少一个与环胺基连接或稠合的非胺环基，其中所述环胺基包括具有碳数的环 为4〜6，非胺环基包括碳数为5〜8的环。

公开(公告)号：US20230178511A1

公开(公告)日：2023-06-08

申请号：US17975054

申请日：2022-10-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young Chul SHIN ,  MinWoo RHEE ,  Su Min KIM ,  Il Young HAN ,  Nung Pyo HONG ,  Seung Don LEE ,  Kyeong Bin LIM

IPC: H01L23/00 ,  H01L25/065

CPC classification number: H01L24/80 ,  H01L25/0657 ,  H01L25/0652 ,  H01L24/05 ,  H01L24/08 ,  H01L24/74 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1436 ,  H01L2924/1431 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/73204 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/08145 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05172 ,  H01L2224/05005 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/80224 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80098 ,  H01L2225/06527 ,  H01L2225/06541

Abstract: A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.

公开(公告)号：US20210255544A1

公开(公告)日：2021-08-19

申请号：US17003414

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Suk Koo HONG ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI

IPC: G03F7/004 ,  G03F7/038 ,  G03F7/039

Abstract: A resist composition including a polymer; a photoacid generator; and a material represented by Formula 1:

公开(公告)号：US20210263411A1

公开(公告)日：2021-08-26

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/004 ,  C08L25/06 ,  C07C381/12 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20210240079A1

公开(公告)日：2021-08-05

申请号：US17003373

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon PARK ,  Su Min KIM ,  Yechan KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027 ,  H01L21/3213 ,  G03F7/20

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.