- 专利标题: METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
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申请号: US17975054申请日: 2022-10-27
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公开(公告)号: US20230178511A1公开(公告)日: 2023-06-08
- 发明人: Young Chul SHIN , MinWoo RHEE , Su Min KIM , Il Young HAN , Nung Pyo HONG , Seung Don LEE , Kyeong Bin LIM
- 申请人: SAMSUNG ELECTRONICS CO., LTD.
- 申请人地址: KR Suwon-si
- 专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人: SAMSUNG ELECTRONICS CO., LTD.
- 当前专利权人地址: KR Suwon-si
- 优先权: KR 20210173904 2021.12.07
- 主分类号: H01L23/00
- IPC分类号: H01L23/00 ; H01L25/065
摘要:
A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.
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