公开(公告)号：US20230178511A1

公开(公告)日：2023-06-08

申请号：US17975054

申请日：2022-10-27

申请人： SAMSUNG ELECTRONICS CO., LTD.

发明人： Young Chul SHIN ,  MinWoo RHEE ,  Su Min KIM ,  Il Young HAN ,  Nung Pyo HONG ,  Seung Don LEE ,  Kyeong Bin LIM

IPC分类号： H01L23/00 ,  H01L25/065

CPC分类号： H01L24/80 ,  H01L25/0657 ,  H01L25/0652 ,  H01L24/05 ,  H01L24/08 ,  H01L24/74 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1436 ,  H01L2924/1431 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/73204 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/08145 ,  H01L2224/05166 ,  H01L2224/0518 ,  H01L2224/05172 ,  H01L2224/05005 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05558 ,  H01L2224/05576 ,  H01L2224/05647 ,  H01L2224/05687 ,  H01L2224/80224 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80098 ,  H01L2225/06527 ,  H01L2225/06541

摘要： A method for manufacturing a semiconductor device is provided. The method for manufacturing a semiconductor device which uses an apparatus for manufacturing the semiconductor device including: a chamber, a support structure provided inside the chamber, and configured to support a bonding structure that comprises a first substrate structure, a second substrate structure, and a bonding metal layer provided between the first substrate structure and the second substrate structure, and a laser device which is provided above the chamber, the semiconductor device manufacturing method comprising: irradiating a laser beam to the bonding structure using the laser device.