公开(公告)号：US20230282475A1

公开(公告)日：2023-09-07

申请号：US18098856

申请日：2023-01-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun Hyea KO ,  Hoon HAN ,  Byung Keun HWANG ,  Jae Woon KIM ,  Jeong Ho MUN ,  Younghun SUNG ,  Hyun-Ji SONG ,  Youn Joung CHO

IPC: H01L21/02 ,  G03F7/038 ,  H01L21/311 ,  H01L21/56 ,  G03F7/16 ,  G03F7/09

CPC classification number: H01L21/02118 ,  G03F7/0387 ,  G03F7/094 ,  G03F7/168 ,  H01L21/02205 ,  H01L21/02255 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/56

Abstract: A semiconductor device manufacturing method includes providing a first layer having a first surface, providing a second layer including a trench that exposes the first surface, onto the first layer, forming a first polymer layer that fills the trench, and performing a heat treatment process on the first polymer layer to form a second polymer layer. A second surface of the second layer is exposed by the trench, the first polymer layer includes a first portion being in contact with the first surface, and a second portion being in contact with the second surface, when the heat treatment process is performed, the first portion of the first polymer layer is decomposed, when the heat treatment process is performed, the second portion of the first polymer layer is cross-linked to form the second polymer layer, and physical properties of the first layer are different from physical properties of the second layer.