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公开(公告)号：US20240242766A1
公开(公告)日：2024-07-18
申请号：US18485353
申请日：2023-10-12
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seo
CPC classification number: G11C16/102 , G11C16/08 , G11C16/28
Abstract: A memory device includes a memory cell that is configured to have data stored therein, and a control logic that is configured to determine a dummy voltage based on a location of a selected word line electrically connected to the memory cell, and is configured to apply the dummy voltage to dummy word lines. First and second ones of the dummy word lines are adjacent to opposing ends in a vertical direction of a memory NAND string including the memory cell, respectively.
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公开(公告)号：US20240020187A1
公开(公告)日：2024-01-18
申请号：US18374717
申请日：2023-09-29
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong KIM , Jinyoung Kim , Sehwan Park , Hyun Seo , Sangwan Nam
CPC classification number: G06F11/0727 , G06F11/0757 , G06F11/076 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C11/56
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
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公开(公告)号：US10819368B2
公开(公告)日：2020-10-27
申请号：US16547770
申请日：2019-08-22
Inventor： Myung Geun Song , Myung Joo Kang , Byeong Eon Lee , Myoung Su Cho , Young Jin Koh , Geon Woo Kim , Sang Yeon Kim , Hyun Seo , Dong Jun Woo , Jae Woong Choi
Abstract: A method for compressing time series data includes: reading original data including time series data; measuring a unit of the original data; determining a threshold for determining a range allowing for a difference between compressed data and the original data; performing longest distance downsampling to preserve an abnormal point of the original data; storing a start point and an end point of the original data; performing drop-out on the longest distance downsampling result, wherein the drop-out is not performed for the start point and the end point; and if the number of values of the original data is smaller than α times the original data length, storing at least one of the values of the original data as a reference point, wherein α is a real number having a value between 0 and 1.
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公开(公告)号：US20240221826A1
公开(公告)日：2024-07-04
申请号：US18523045
申请日：2023-11-29
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seo
IPC: G11C11/4096 , G11C11/4074 , G11C11/408
CPC classification number: G11C11/4096 , G11C11/4074 , G11C11/4085
Abstract: Disclosed is a flash memory including first to third memory cells connected to a cell string, a first selection line configured to select the cell string, a second selection line configured to select a connection with a common source line, a first word line connected to the first memory cell and positioned adjacent to the first or second selection line, a second word line connected to the second memory cell and adjacent to the first word line, and a third word line connected to the third memory cell and positioned between the second word line and the first or second selection line. Wherein during a read operation, a first recovery voltage is applied to unselected word lines when the selected word line is the second word line, and a second recovery voltage is applied to the unselected word lines when the selected word line is not the second word line.
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5.发明公开公开(公告)号：US20240212761A1
公开(公告)日：2024-06-27
申请号：US18464383
申请日：2023-09-11
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seo
CPC classification number: G11C16/10 , G11C16/0483 , G11C16/08 , G11C16/24 , G11C16/32
Abstract: In a method of programming data in a nonvolatile memory device including memory cells and a page buffer, the memory cells are electrically connected to wordlines and bitlines, and the page buffer controls the memory cells. In a first program time period of a first program loop, a program voltage having a first program voltage is applied to a selected wordline that is electrically connected to a target memory cell, and a bitline shut-off signal having a first delay is applied to the page buffer. The program voltage is applied to the selected wordline multiple times during one program loop while a magnitude of the program voltage is changed. The delay of the bitline shut-off signal corresponds to a time period during which the bitline shut-off signal maintains a ground voltage.
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Patent Agency Ranking
公开(公告)号：US11500706B2
公开(公告)日：2022-11-15
申请号：US17233816
申请日：2021-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong Kim , Jinyoung Kim , Sehwan Park , Hyun Seo , Sangwan Nam
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data, calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
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公开(公告)号：US10902922B2
公开(公告)日：2021-01-26
申请号：US16412953
申请日：2019-05-15
Applicant: Samsung Electronics Co., Ltd.
Inventor： Hyun Seo , Kui Han Ko , Jin-Young Kim , Il Han Park , Bong Soon Lim
Abstract: A nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.
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公开(公告)号：US20200220555A1
公开(公告)日：2020-07-09
申请号：US16547770
申请日：2019-08-22
Inventor： Myung Geun Song , Myung Joo Kang , Byeong Eon Lee , Myoung Su Cho , Young Jin Koh , Geon Woo Kim , Sang Yeon Kim , Hyun Seo , Dong Jun Woo , Jae Woong Choi
IPC: H03M7/30
Abstract: A method for compressing time series data includes: reading original data including time series data; measuring a unit of the original data; determining a threshold for determining a range allowing for a difference between compressed data and the original data; performing longest distance downsampling to preserve an abnormal point of the original data; storing a start point and an end point of the original data; performing drop-out on the longest distance downsampling result, wherein the drop-out is not performed for the start point and the end point; and if the number of values of the original data is smaller than a times the original data length, storing at least one of the values of the original data as a reference point, wherein α is a real number having a value between 0 and 1.
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公开(公告)号：US11815982B2
公开(公告)日：2023-11-14
申请号：US17968912
申请日：2022-10-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong Kim , Jinyoung Kim , Sehwan Park , Hyun Seo , Sangwan Nam
CPC classification number: G06F11/0727 , G06F11/076 , G06F11/0757 , G11C16/0483 , G11C16/10 , G11C16/26 , G11C11/56 , G11C16/34
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data; calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
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公开(公告)号：US20220057968A1
公开(公告)日：2022-02-24
申请号：US17233816
申请日：2021-04-19
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor： Wandong KIM , Jinyoung KIM , Sehwan PARK , Hyun Seo , Sangwan NAM
Abstract: An operating method of a nonvolatile memory device for programming multi-page data, the operating method including: receiving the multi-page data from a memory controller; programming first page data among the multi-page data to first memory cells connected to a word line adjacent to a selected word line; reading previous page data previously stored in second memory cells connected to the selected word line based on a first sensing value and a second sensing value after programming the first page data, calculating a first fail bit number by comparing first bits of the previous page data read based on the first sensing value to second bits of the previous page data read based on the second sensing value; and programming the previous page data read from the second memory cells and second page data among the multi-page data to the second memory cells based on the first fail bit number.
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