Disclosed is a flash memory including first to third memory cells connected to a cell string, a first selection line configured to select the cell string, a second selection line configured to select a connection with a common source line, a first word line connected to the first memory cell and positioned adjacent to the first or second selection line, a second word line connected to the second memory cell and adjacent to the first word line, and a third word line connected to the third memory cell and positioned between the second word line and the first or second selection line. Wherein during a read operation, a first recovery voltage is applied to unselected word lines when the selected word line is the second word line, and a second recovery voltage is applied to the unselected word lines when the selected word line is not the second word line.