公开(公告)号：US10902922B2

公开(公告)日：2021-01-26

申请号：US16412953

申请日：2019-05-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Seo ,  Kui Han Ko ,  Jin-Young Kim ,  Il Han Park ,  Bong Soon Lim

IPC: G11C16/16 ,  G11C16/08

Abstract: A nonvolatile memory includes a first sub-block defined by a first string select line and a first word line; a second sub-block defined by a second string select line different from the first string select line and a second word line different from the first word line; a first vacant block defined by the first string select line and the second word line; and a second vacant block defined by the second string select line and the first word line. First data is programmed in the first sub-block with, second data is programmed in the second sub-block, and no data is programmed in the first vacant block and the second vacant block.