公开(公告)号：US20140167180A1

公开(公告)日：2014-06-19

申请号：US14045034

申请日：2013-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junjie Xiong ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Yoon-Seok Lee ,  You-Shin Choi

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  Y10S257/90

Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.

Abstract translation: 提供半导体器件。 半导体器件可以包括晶体管区域和电阻器区域。 晶体管区域可以包括栅极结构。 电阻器区域可以在绝缘层上包括绝缘层和电阻器结构。 栅极结构的顶表面和电阻器结构的顶表面可以是基本上共面的。

公开(公告)号：US08969971B2

公开(公告)日：2015-03-03

申请号：US14045034

申请日：2013-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junjie Xiong ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Yoon-Seok Lee ,  You-Shin Choi

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  Y10S257/90

Abstract: Semiconductor devices are provided. A semiconductor device may include a transistor area and a resistor area. The transistor area may include a gate structure. The resistor area may include an insulating layer and a resistor structure on the insulating layer. A top surface of the gate structure and a top surface of the resistor structure may be substantially coplanar.

Abstract translation: 提供半导体器件。 半导体器件可以包括晶体管区域和电阻器区域。 晶体管区域可以包括栅极结构。 电阻器区域可以在绝缘层上包括绝缘层和电阻器结构。 栅极结构的顶表面和电阻器结构的顶表面可以是基本上共面的。

公开(公告)号：US20140017863A1

公开(公告)日：2014-01-16

申请号：US13918475

申请日：2013-06-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yoon-Seok Lee ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Sung-Ho Son ,  JunJie Xiong ,  You-Shin Choi

IPC: H01L29/66

CPC classification number: H01L29/66477 ,  H01L21/28518 ,  H01L21/76814 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/5228 ,  H01L27/0629 ,  H01L27/1052 ,  H01L28/20 ,  H01L29/41783 ,  H01L29/517 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66628 ,  H01L29/66636 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of manufacturing a semiconductor device including metal gates are provided. The method may include forming a resistor pattern and a dummy gate electrode, which include polysilicon, and forming an impurity region adjacent to the dummy gate electrode. The method may further include replacing the dummy gate electrode with a gate electrode and then forming metal silicide patterns on the resistor pattern and the impurity region.

Abstract translation: 提供了制造包括金属栅极的半导体器件的方法。 该方法可以包括形成包括多晶硅的电阻器图案和虚拟栅极电极，并且形成与虚拟栅电极相邻的杂质区域。 该方法可以进一步包括用栅电极代替伪栅极电极，然后在电阻器图案和杂质区域上形成金属硅化物图案。

公开(公告)号：US08981489B2

公开(公告)日：2015-03-17

申请号：US14102736

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junjie Xiong ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Yoon-Seok Lee ,  You-Shin Choi

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L27/06 ,  H01L49/02

CPC classification number: H01L27/0629 ,  H01L28/20 ,  H01L28/24

Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.

Abstract translation: 提供了包括电阻器结构的半导体器件。 半导体器件可以包括有源区上的栅极结构，场区上的电阻结构以及栅结构上的第一层间绝缘层和电阻结构。 半导体器件还可以包括垂直穿透第一层间绝缘层并且与第一层间绝缘层和电阻器沟槽插塞上的电阻器结构和第二层间绝缘层接触的电阻器沟槽插塞。 此外，半导体器件可以包括垂直穿过第一和第二层间绝缘层并接触电阻器结构的电阻器接触插塞。

公开(公告)号：US08952452B2

公开(公告)日：2015-02-10

申请号：US13692012

申请日：2012-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hong-Seong Kang ,  Yoon-Hae Kim ,  Jong-Shik Yoon

IPC: H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L29/78 ,  H01L29/40 ,  H01L21/768 ,  H01L29/49 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/78 ,  H01L21/7682 ,  H01L21/76897 ,  H01L21/823456 ,  H01L21/823468 ,  H01L27/088 ,  H01L29/401 ,  H01L29/41783 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4991 ,  H01L29/6653 ,  H01L29/66545 ,  H01L29/6656

Abstract: Semiconductor devices, and a method of manufacturing the same, include a gate insulating film pattern over a semiconductor substrate. A gate electrode is formed over the gate insulating film pattern. A spacer structure is formed on at least one side of the gate electrode and the gate insulating film pattern. The spacer structure includes a first insulating film spacer contacting the gate insulating film pattern, and a second insulating film spacer on an outer side of the first insulating film spacer. The semiconductor device has an air gap between the first insulating film spacer and the second insulating film spacer.

Abstract translation: 半导体器件及其制造方法包括在半导体衬底上的栅极绝缘膜图案。 在栅极绝缘膜图案上形成栅电极。 在栅电极和栅绝缘膜图案的至少一侧上形成间隔结构。 间隔结构包括与栅极绝缘膜图案接触的第一绝缘膜间隔件和在第一绝缘膜间隔件的外侧上的第二绝缘膜间隔件。 半导体器件在第一绝缘膜间隔件和第二绝缘膜间隔件之间具有气隙。

公开(公告)号：US20140167181A1

公开(公告)日：2014-06-19

申请号：US14102736

申请日：2013-12-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Junjie Xiong ,  Yoon-Hae Kim ,  Hong-Seong Kang ,  Yoon-Seok Lee ,  You-Shin Choi

IPC: H01L27/06

CPC classification number: H01L27/0629 ,  H01L28/20 ,  H01L28/24

Abstract: Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.

Abstract translation: 提供了包括电阻器结构的半导体器件。 半导体器件可以包括有源区上的栅极结构，场区上的电阻结构以及栅结构上的第一层间绝缘层和电阻结构。 半导体器件还可以包括垂直穿透第一层间绝缘层并且与第一层间绝缘层和电阻器沟槽插塞上的电阻器结构和第二层间绝缘层接触的电阻器沟槽插塞。 此外，半导体器件可以包括垂直穿过第一和第二层间绝缘层并接触电阻器结构的电阻器接触插塞。