Invention Grant
- Patent Title: Semiconductor devices including a resistor structure and methods of forming the same
- Patent Title (中): 包括电阻结构的半导体器件及其形成方法
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Application No.: US14102736Application Date: 2013-12-11
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Publication No.: US08981489B2Publication Date: 2015-03-17
- Inventor: Junjie Xiong , Yoon-Hae Kim , Hong-Seong Kang , Yoon-Seok Lee , You-Shin Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley Sajovec, P.A.
- Priority: KR10-2012-0145747 20121213
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L27/06 ; H01L49/02
Abstract:
Semiconductor devices including a resistor structure is provided. The semiconductor device may include a gate structure on an active region, a resistor structure on a field region and a first interlayer insulating layer on the gate structure and the resistor structure. The semiconductor devices may also include a resistor trench plug vertically penetrating through the first interlayer insulating layer and contacting the resistor structure and a second interlayer insulating layer on the first interlayer insulating layer and the resistor trench plug. Further, the semiconductor devices may include a resistor contact plug vertically penetrating through the first and second interlayer insulating layers and contacting the resistor structure.
Public/Granted literature
- US20140167181A1 SEMICONDUCTOR DEVICES INCLUDING A RESISTOR STRUCTURE AND METHODS OF FORMING THE SAME Public/Granted day:2014-06-19
Information query
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