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    Semiconductor device and method of fabricating the same
    2.
    发明授权
    Semiconductor device and method of fabricating the same 有权

    公开(公告)号：US10276694B2

    公开(公告)日：2019-04-30

    申请号：US15335885

    申请日：2016-10-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

    IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238

    Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

    Image sensor with separation pattern and image sensor module including the same
    3.
    发明授权
    Image sensor with separation pattern and image sensor module including the same 有权

    公开(公告)号：US11152415B2

    公开(公告)日：2021-10-19

    申请号：US16506074

    申请日：2019-07-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Ha-Jin Lim ,  Kook-Tae Kim ,  Jong-Min Jeon ,  Jae-Sung Hur ,  Hye-Ri Hong

    IPC: H01L27/146 ,  H04N5/369

    Abstract: An image sensor includes a photoelectric converter in a pixel area of a substrate to generate photoelectrons in response to an incident light that is incident onto the pixel area, a signal generator on a first surface of the substrate in the pixel area to generate electric signals corresponding to image information of an object in accordance with the photoelectrons, and a pixel separation pattern penetrating through the substrate from the first surface of the substrate to a second surface of the substrate opposite to the first surface of the substrate, the pixel separation pattern including an insulation pattern having a refractive index smaller than that of the substrate and a metallic conductive pattern enclosed by the insulation pattern, and the pixel area being enclosed by the pixel separation pattern and isolated from a neighboring pixel area.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    4.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
    半导体器件及其制造方法

    公开(公告)号：US20170047433A1

    公开(公告)日：2017-02-16

    申请号：US15335885

    申请日：2016-10-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

    IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02

    CPC classification number: H01L29/66818 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

    Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

    Abstract translation: 半导体器件包括包含III族元素和V族元素的半导体衬底，以及在半导体衬底上的栅极结构。 半导体衬底包括接触栅极结构的底表面的第一区域和设置在第一区域下方的第二区域。 第一区域中的III族元素的浓度低于第一区域中的V族元素的浓度，并且第二区域中的III族元素的浓度基本上等于第二区域中的第V族元素的浓度 地区。

    Semiconductor device and method of fabricating the same
    6.
    发明授权
    Semiconductor device and method of fabricating the same 有权
    半导体装置及其制造方法

    公开(公告)号：US09515186B2

    公开(公告)日：2016-12-06

    申请号：US14602660

    申请日：2015-01-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

    IPC: H01L29/76 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

    CPC classification number: H01L29/66818 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

    Abstract: A semiconductor device includes a semiconductor substrate including a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate 5 structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

    Abstract translation: 半导体器件包括具有III族元素和V族元素的半导体衬底以及半导体衬底上的栅极结构。 半导体衬底包括接触栅极5结构的底表面的第一区域和设置在第一区域下方的第二区域。 第一区域中的III族元素的浓度低于第一区域中的V族元素的浓度，并且第二区域中的III族元素的浓度基本上等于第二区域中的第V族元素的浓度 地区。

    Method of forming a high-k crystalline dielectric
    7.
    发明授权
    Method of forming a high-k crystalline dielectric 有权
    形成高k结晶电介质的方法

    公开(公告)号：US08975171B1

    公开(公告)日：2015-03-10

    申请号：US13930227

    申请日：2013-06-28

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Ha-Jin Lim ,  Weon-Hong Kim

    IPC: H01L21/20 ,  H01L21/02

    CPC classification number: H01L21/02181 ,  H01L21/02148 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/28273 ,  H01L21/3105 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

    Abstract: Provided are a method of forming a dielectric and a method of fabricating a semiconductor device. The method includes forming a preliminary dielectric including Hf, O and an “A” element on an underlying layer. The preliminary dielectric is formed in an amorphous structure or a mixed structure of an amorphous structure and an “M” crystalline structure. The “A” element about 1 at % to about 5 at % of the total content of the “A” element and Hf in the preliminary dielectric. Through a nitridation process, nitrogen is added to the preliminary dielectric. The nitrogen-containing dielectric is changed into a dielectric having a “T” crystalline structure through a phase transition process, wherein the “T” crystalline structure is different from the “M” crystalline structure. An upper layer is formed on the “T” crystalline dielectric.

    Abstract translation: 提供形成电介质的方法和制造半导体器件的方法。 该方法包括在下层上形成包含Hf，O和“A”元素的预备电介质。 预置电介质形成为非晶结构或非晶结构和“M”晶体结构的混合结构。 “A”元素在“A”元素的总含量和预置电介质中的Hf的约1at％至约5at％的“A”元素。 通过氮化处理，将氮气加入到初步电介质中。 通过相变过程将含氮电介质变成具有“T”晶体结构的电介质，其中“T”晶体结构不同于“M”晶体结构。 在“T”晶体电介质上形成上层。

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