公开(公告)号：US10276694B2

公开(公告)日：2019-04-30

申请号：US15335885

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

IPC: H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/8238

Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

公开(公告)号：US20170047433A1

公开(公告)日：2017-02-16

申请号：US15335885

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

IPC: H01L29/66 ,  H01L21/28 ,  H01L21/02

CPC classification number: H01L29/66818 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a semiconductor substrate comprising a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

Abstract translation: 半导体器件包括包含III族元素和V族元素的半导体衬底，以及在半导体衬底上的栅极结构。 半导体衬底包括接触栅极结构的底表面的第一区域和设置在第一区域下方的第二区域。 第一区域中的III族元素的浓度低于第一区域中的V族元素的浓度，并且第二区域中的III族元素的浓度基本上等于第二区域中的第V族元素的浓度 地区。

公开(公告)号：US09515186B2

公开(公告)日：2016-12-06

申请号：US14602660

申请日：2015-01-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ha-Jin Lim ,  Hyeong-Joon Kim ,  Nae-In Lee

IPC: H01L29/76 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092

CPC classification number: H01L29/66818 ,  H01L21/02241 ,  H01L21/28264 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/66522 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/7851

Abstract: A semiconductor device includes a semiconductor substrate including a group III element and a group V element, and a gate structure on the semiconductor substrate. The semiconductor substrate includes a first region which contacts a bottom surface of the gate 5 structure and a second region which is disposed under the first region. The concentration of the group III element in the first region is lower than that of the group V element in the first region, and the concentration of the group III element in the second region is substantially equal to that of the group V element in the second region.

Abstract translation: 半导体器件包括具有III族元素和V族元素的半导体衬底以及半导体衬底上的栅极结构。 半导体衬底包括接触栅极5结构的底表面的第一区域和设置在第一区域下方的第二区域。 第一区域中的III族元素的浓度低于第一区域中的V族元素的浓度，并且第二区域中的III族元素的浓度基本上等于第二区域中的第V族元素的浓度 地区。