公开(公告)号：US20210040130A1

公开(公告)日：2021-02-11

申请号：US16881283

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Soyoung LEE ,  Seungmin RYU ,  Gyuhee PARK ,  Jaesoon LIM ,  Younjoung CHO ,  Akio SAITO ,  Wakana FUSE ,  Yutaro AOKI ,  Takanori KOIDE

IPC: C07F17/00 ,  C09D1/00 ,  C01B21/06

Abstract: A niobium compound and a method of forming a thin film using the niobium compound, the compound being represented by the following General formula I: wherein, in General formula I, R1, R4, R5, R6, R7, and R8 are each independently a hydrogen atom, a C1-C6 linear or branched alkyl group or a C3-C6 cyclic hydrocarbon group, at least one of R4, R5, R6, R7, and R8 being a C1-C6 linear or branched alkyl group, and R2 and R3 are each independently a hydrogen atom, a halogen atom, a C1-C6 linear or branched alkyl group, or a C3-C6 cyclic hydrocarbon group.

公开(公告)号：US20250062228A1

公开(公告)日：2025-02-20

申请号：US18657084

申请日：2024-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun PARK ,  Gyuhee PARK ,  Inji LEE ,  Hase NAOKI

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H10B12/00

Abstract: A semiconductor device may include a substrate including devices; a lower insulating layer on the substrate; a lower wiring layer on the lower insulating layer and electrically connected to the devices; a first upper insulating layer on the lower insulating layer; an upper contact penetrating through the first upper insulating layer and connected to the lower wiring layer, an upper wiring layer on the first upper insulating layer and connected to the upper contact; and a second upper insulating layer on the first upper insulating layer and covering the upper wiring layer. The upper wiring layer may include an aluminum alloy and 0.01-3 wt % of the aluminum alloy may be at least one dopant among Zn, Ni, V, and Cr. A balance of the aluminum alloy may include Al.

公开(公告)号：US20220324887A1

公开(公告)日：2022-10-13

申请号：US17708323

申请日：2022-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Jaewoon KIM ,  Kazuki HARANO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yutaro AOKI ,  Gyuhee PARK ,  Younjoung CHO ,  Wakana FUSE ,  Yoshiki MANABE ,  Hiroyuki UCHIUZOU ,  Masayuki KIMURA ,  Takahiro YOSHII

IPC: C07F9/00 ,  H01L49/02 ,  H01L27/108 ,  C23C16/34 ,  C23C16/455

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit device, the organometallic adduct compound being represented by General Formula (I):

公开(公告)号：US20210284667A1

公开(公告)日：2021-09-16

申请号：US17193531

申请日：2021-03-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Jaewoon KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Kazuya SAITO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Yutaro AOKI ,  Hiroyuki UCHIUZOU ,  Wakana FUSE

IPC: C07F9/141 ,  C23C16/18 ,  H01L21/285

Abstract: An organometallic adduct compound and a method of manufacturing an integrated circuit (IC) device, the organometallic adduct compound being represented by General formula (I): in General formula (I), R1, R2, and R3 are each independently a C1 to C5 alkyl group, at least one of R1, R2, and R3 being a C1 to C5 alkyl group in which at least one hydrogen atom is substituted with a fluorine atom, M is a niobium atom, a tantalum atom, or a vanadium atom, X is a halogen atom, m is an integer of 3 to 5, and n is 1 or 2.

公开(公告)号：US20230406822A1

公开(公告)日：2023-12-21

申请号：US18209583

申请日：2023-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sunhye HWANG ,  Sunggi KIM ,  Yeonghun KIM ,  Gyunsang LEE ,  Jihyun LEE ,  Gyuhee PARK ,  Seung SON ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/02

CPC classification number: C07D207/46 ,  C07D265/32 ,  C07D403/12 ,  H01L21/0214 ,  H01L21/02219 ,  H01L21/02216 ,  H01L21/0228

Abstract: A silicon compound, a composition, and associated methods, the silicon compound being represented by Chemical Formula (1):


R1m(OR2)n(OR3)3-m-nSi—O—SiR4p(OR5)q(OR6)3-p-q,  Chemical Formula (1)



wherein, in Chemical Formula (1), m, n, p, and q are each independently an integer of 0 to 3, and satisfy the following relations m+p≥1, m+n≤3, and p+q≤3, R1 is a heterocyclic group, R4 is a heterocyclic group, a carbon saturated group, or a carbon unsaturated group, and R2, R3, R5, and R6 are each independently a hydrogen atom, a C1-C7 alkyl group, a C2-C7 alkenyl group, a C3-C7 cycloalkyl group, or a C3-C7 cycloalkenyl group.

公开(公告)号：US20210388010A1

公开(公告)日：2021-12-16

申请号：US17346400

申请日：2021-06-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungmin RYU ,  Younsoo KIM ,  Gyuhee PARK ,  Younjoung CHO ,  Yutaro AOKI ,  Wakana FUSE ,  Kazuki HARANO ,  Takanori KOIDE ,  Yoshiki MANABE ,  Kazuya SAITO ,  Hiroyuki UCHIUZOU

IPC: C07F9/00 ,  H01L51/00 ,  C23C16/455 ,  C23C16/34

Abstract: An organometallic compound and a method of manufacturing an integrated circuit (IC) device, the organometallic compound being represented by Formula (I),

公开(公告)号：US20240067663A1

公开(公告)日：2024-02-29

申请号：US18231339

申请日：2023-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Seungmin RYU ,  Gyuhee PARK ,  Younjoung CHO ,  Atsushi YAMASHITA

IPC: C07F5/00 ,  C01F17/218 ,  H01L21/02

CPC classification number: C07F5/003 ,  C01F17/218 ,  H01L21/02192 ,  H01L21/02205 ,  H01L21/02271 ,  H01L21/0228 ,  C23C16/405

Abstract: An yttrium compound, a method of manufacturing an integrated circuit device, and a raw material for forming an yttrium-containing film, the yttrium compound being represented by the following General formula (1):

公开(公告)号：US20230040334A1

公开(公告)日：2023-02-09

申请号：US17859214

申请日：2022-07-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunwoo KIM ,  Kazuki HARANO ,  Kiyoshi MURATA ,  Haruyoshi SATO ,  Younsoo KIM ,  Seungmin RYU ,  Atsushi YAMASHITA ,  Gyuhee PARK ,  Younjoung CHO

IPC: C07F17/00 ,  C23C16/40

Abstract: An yttrium compound and a method of manufacturing an integrated circuit device, the compound being represented by General Formula (I):

公开(公告)号：US20210300955A1

公开(公告)日：2021-09-30

申请号：US17072096

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gyuhee PARK ,  Younjoung CHO ,  Haruyoshi SATO ,  Kazuki HARANO ,  Hiroyuki UCHIUZOU

IPC: C07F11/00 ,  C01G39/02 ,  C01B21/06 ,  C23C16/40 ,  C23C16/34

Abstract: A molybdenum compound and a method of manufacturing an integrated circuit device, the molybdenum compound being represented by the following General Formula (I):