公开(公告)号：US20250062228A1

公开(公告)日：2025-02-20

申请号：US18657084

申请日：2024-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun PARK ,  Gyuhee PARK ,  Inji LEE ,  Hase NAOKI

IPC: H01L23/528 ,  H01L23/522 ,  H01L23/532 ,  H10B12/00

Abstract: A semiconductor device may include a substrate including devices; a lower insulating layer on the substrate; a lower wiring layer on the lower insulating layer and electrically connected to the devices; a first upper insulating layer on the lower insulating layer; an upper contact penetrating through the first upper insulating layer and connected to the lower wiring layer, an upper wiring layer on the first upper insulating layer and connected to the upper contact; and a second upper insulating layer on the first upper insulating layer and covering the upper wiring layer. The upper wiring layer may include an aluminum alloy and 0.01-3 wt % of the aluminum alloy may be at least one dopant among Zn, Ni, V, and Cr. A balance of the aluminum alloy may include Al.