公开(公告)号：US09935017B2

公开(公告)日：2018-04-03

申请号：US15489782

申请日：2017-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Eung-Gwan Kim ,  Jeong-Yun Lee

IPC: H01L21/02 ,  H01L21/8238 ,  H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/08 ,  H01L29/78

CPC classification number: H01L21/823828 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: Spaced apart first and second fins are formed on a substrate. An isolation layer is formed on the substrate between the first and second fins. A gate electrode is formed on the isolation layer and crossing the first and second fins. Source/drain regions are formed on the first and second fins adjacent the gate electrode. After forming the source/drain regions, a portion of the gate electrode between the first and second fins is removed to expose the isolation layer. The source/drain regions may be formed by epitaxial growth.

公开(公告)号：US09659827B2

公开(公告)日：2017-05-23

申请号：US14803893

申请日：2015-07-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung-Gun You ,  Eung-Gwan Kim ,  Jeong-Yun Lee

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L21/823828 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/823814 ,  H01L21/823821 ,  H01L21/823864 ,  H01L21/823878 ,  H01L27/0924 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/7848

Abstract: Spaced apart first and second fins are formed on a substrate. An isolation layer is formed on the substrate between the first and second fins. A gate electrode is formed on the isolation layer and crossing the first and second fins. Source/drain regions are formed on the first and second fins adjacent the gate electrode. After forming the source/drain regions, a portion of the gate electrode between the first and second fins is removed to expose the isolation layer. The source/drain regions may be formed by epitaxial growth.